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Interfacial Layer Formation of a Heat Treated Teos Based Oxide Prepared by a Pecvd Technique

Published online by Cambridge University Press:  03 September 2012

T.J. Lee ,
D.S. Jeong ,
C.S. Song ,
S.Y. Lee  and
C.H. Park
T.J. Lee
Affiliation:
Samsung Electronics Co., LTD, Micro Pilot Operation Group, 82-3 Dodang-Dong, Wonmi-Ku, Buchun,.Kyunggi-Do,.421-130,.Korea.
D.S. Jeong
Affiliation:
Samsung Electronics Co., LTD, Micro Pilot Operation Group, 82-3 Dodang-Dong, Wonmi-Ku, Buchun,.Kyunggi-Do,.421-130,.Korea.
C.S. Song
Affiliation:
Samsung Electronics Co., LTD, Micro Pilot Operation Group, 82-3 Dodang-Dong, Wonmi-Ku, Buchun,.Kyunggi-Do,.421-130,.Korea.
S.Y. Lee
Affiliation:
Samsung Electronics Co., LTD, Micro Pilot Operation Group, 82-3 Dodang-Dong, Wonmi-Ku, Buchun,.Kyunggi-Do,.421-130,.Korea.
C.H. Park
Affiliation:
Samsung Electronics Co., LTD, Micro Pilot Operation Group, 82-3 Dodang-Dong, Wonmi-Ku, Buchun,.Kyunggi-Do,.421-130,.Korea.
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Abstract

An interfacial layer is formed between the TEOS(tetraethylorthosilicate) based oxide and silicon substrate when the oxide is thermally treated and it shows unique properties by leaving a unremovable layer in an H F(hydrofluoric acid) dipping. While the interface formed in the temperature range of 950 - 1100 °C demonstrates hydrophilic state, it renders the surface hydrophobic in the higher range of 1150 - 1200 °C. Its characteristics are analyzed by ESCA and the measurement of water contact angle on the silicon surface after stripping the oxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 333
Copyright
Copyright © Materials Research Society 1997

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References

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