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INTERFACIAL DEFECTS AND EPITAXY

Published online by Cambridge University Press:  28 February 2011

R.C. POND
R.C. POND*
Affiliation:
Department of Metallurgy and Materials Science. The University of Liverpool. P.O. Box 147, Liverpool L69 3BX.
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Abstract

It is shown that interfacial defects are characterised by combinations of symmetry operations, one from each of the adjacent crystals. This approach demonstrates that the variety of possible interfacial defects is broader than had been previously recognised, and includes disclinations and dispirations in addition to dislocations. The condition of the initial substrate surface is shown to have a very important influence on the character and stability of interfacial defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 3
Copyright
Copyright © Materials Research Society 1986

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References

1. Matthews, J.W., 1975, Epitaxial Growth, Mat. Sci. Series, Academic Press, New York.Google Scholar
2. Pond, R.C. and Bollmann, W., 1979, Phil. Trans. Roy. Soc. Lond. 292, 449.Google Scholar
3. Pond, R.C. and Vlachavas, D.S., 1983, Proc. R. Soc. Lond. 386A, 95.Google Scholar
4. Pond, R.C., 1985, Dislocations and The Properties of Real Materials, Inst. of Metals, London, 71.Google Scholar
5. Nabarro, F.R.N., 1967, Theory of Crystal Dislocations, Oxford Univ. Press.Google Scholar
6.International Tables for Crystallography, 1983, D. Reidel Pub. Co., Boston.Google Scholar
7. Pond, R.C., Dineen, C., Peters, T. and Pitt, M., in preparation.Google Scholar
8. Reed, W.T., 1953, Dislocations in Crystals, McGraw-Hill, London.Google Scholar
9. Pond, R.C. and Cherns, D., 1985, Surf. Sci., 152, 1197.Google Scholar
10. Igoraski, O., 1971, J. Appl. Phys., 42, 4035.Google Scholar
11. Bartha, J.W. and Henzler, M., 1985, Surf. Sci., in press.Google Scholar
12. Carter, C.B. and Schmalzried, 1985, Phil. Mag., A52, 207.Google Scholar
13. Pond, R.C., McAuley, N. and Devenish, R.W., 1985, Inst. Phys. Conf. Ser. 76, 67.Google Scholar
14. Li, J.C.M., 1972, Surf. Sci. 31, 12.Google Scholar
15. Pond, R.C., Gowers, J.P. and Joyce, B.A., 1985, Surf. Sci., 152, 1191.Google Scholar
16. Kuan, T.S., Kuech, T.F., Wang, W.I. and Wilkie, E.L., 1985, Phys. Rev. Letts., 54, 201.Google Scholar
17. Mickkelsen, J.C. and Boyce, J.B., 1983, Phys. Rev. B28, 7130.Google Scholar
18. Eaglesham, D.J. and Kiely, C.J., 1985, Proc. E.M.A.G., Inst. of Physics, London.Google Scholar
19. Cherns, D. and Kiely, C.J., 1986, these proceedings.Google Scholar