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Interfaces in Ferroelectric Metal Oxide Heterostructures

Published online by Cambridge University Press:  15 February 2011

R. Ramesh ,
J. Lee ,
V. G. Keramidas ,
D. K. Fork ,
S. Ghonge ,
E. Goo  and
O. Auciello
R. Ramesh
Affiliation:
Bellcore, Red Bank, NJ 07701.
J. Lee
Affiliation:
Bellcore, Red Bank, NJ 07701.
V. G. Keramidas
Affiliation:
Bellcore, Red Bank, NJ 07701.
D. K. Fork
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94305.
S. Ghonge
Affiliation:
Department of Materials Science and Engineering, University of Southern California, University Park, Los Angeles, CA 90089.
E. Goo
Affiliation:
Department of Materials Science and Engineering, University of Southern California, University Park, Los Angeles, CA 90089.
O. Auciello
Affiliation:
MCNC Electronics Technology Division, Research Triangle Park, NC 27709–2889.
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Abstract

Realization of a viable nonvolatile ferroelectric thin film memory technology hinges on the successful solution of the reliability problems associated with the ferroelectric capacitor concurrent with the integration of these materials with the appropriate Si-CMOS based drive electronics. This integration process introduces a variety of structural, chemical, ionic and electronic interfaces in the memory elements. In this paper, the influence of some of the interfaces on the ferroelectric properties and on the process integration is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 343: Symposium H – Polycrystalline Thin Films - Structure, Texture, Properties and Applications , 1994 , 431
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. See for example, Proc. of MRS Spring 1993 Meeting, San Francisco, CA, April 1993, Eds. Myers, E.R., Tuttle, B.A., Desu, S.B. and Larsen, P.K., Materials Research Society, Pittsburgh, PA (1993); Proc. of Fifth Int. Symp. on Integrated Ferroelectrics, Colorado Springs, CO., Ed. CA. Paz de Araujo, University of Colorado, Colorado Springs, CO.,April 1993.Google Scholar
2. Scott, J.F. and Araujo, C.A.Paz de, Science, 246, 1400(1989); M.Sayer and K.Sreenivas, Science 247, 1056(1990); G.H.Haertling, J. of Vacuum Science and Technology, 9, 414(1991).CrossRefGoogle Scholar
3. Sinharoy, S., Buhay, H., Lampe, D.R. and Francombe, M.H., J. of Vac. Science and Technology, A10, 1554(1992).CrossRefGoogle Scholar
4. Evans, J.T. and Womack, R.D., IEEE J. of Solid State Circuits, 23, 1171(1988).CrossRefGoogle Scholar
5. Dey, S.K. and Zuleeg, R., Ferroelectrics, 108, 37(1990).CrossRefGoogle Scholar
6. Ramesh, R., Inam, A., Wilkens, B., Chan, W.K., Hart, D.L., Luther, K., and Tarascon, J.M., Science, 252, 944(1991).CrossRefGoogle Scholar
7. Abt, N.E., Misic, P., Zehngut, D. and Regan, E., Proc. of Fourth Int. Symp. on Integrated Ferroelectrics, Monterey, CA, Ed. Paz de Araujo, CA., University of Colorado, Colorado Springs, CO., March 1992, pp 533–540; S.B.Desu and I.K.Y00, ibid, pp640-656.Google Scholar
8. Wolf, R.M., in Materials Research Society Fall Meeting Symposium on “Ferroelectric Thin Films II”, Boston, MA, Dec, 1991, Eds. A.Kingon, E.R.Myers and B.Tuttle, Materials Research Society, Pittsburgh, PA; J.T.Cheung, and R.R.Neurgaonkar, in Proc. of Fourth Int. Symp. on Integrated Ferroelectrics, Monterey, CA, March 1992, Ed. CA. Paz de Araujo, University of Colorado, Colorado Springs, CO.Google Scholar
9. Ramesh, R., Chan, W.K., Wilkens, B., Gilchrist, H., Sands, T., Tarascon, J.M., Keramidas, V.G., Fork, D.K., Lee, J. and Safari, A., Appl. Phys. Lett., 61, 1537(1992); J.Lee, L.Johnson, A.Safari, R.Ramesh, T.Sands, H.Gilchrist and V.G.Keramidas, Appl. Phys. Lett., 63, 27(1993).CrossRefGoogle Scholar
10. Ramesh, R., Gilchrist, H., Sands, T., Keramidas, V.G., Haakenaasen, R. and Fork, D.K., Appl. Phys. Lett., 63, 3592(1993).CrossRefGoogle Scholar
11. Eom, C.B., VanDover, R.B., Phillips, J.M., Fleming, R.M., Cava, R.J., Marshall, J.H., Werder, D. J., Chen, C.H. and Fork, D.K., in Proc. of MRS Spring Meeting Symposium, “Ferroelectric Thin Films III”, San Francisco, CA, April 1993, ppl45–150, Eds. E. R.Myers, B.A.Tuttle, S.B.Desu and P.K.Larsen, Materials Research Society, Pittsburgh, PA (1993).Google Scholar
12. Ramesh, R., Lee, J., Dutta, B., Ravi, T.S., Sands, T. and Keramidas, V.G., in Proc. of Fifth Int. Symposium on Integrated Ferroelectrics, Colorado Springs, CO, March 1993, Ed. CA. Paz de Araujo, University of Colorado, Colorado Springs, CO, Integrated Ferroelectrics, in press.Google Scholar
13. Lichtenwalner, D.J., Dat, R., Auciello, O. and Kingon, A.I., in Proc. of the Eighth Int. Meeting on Ferroelectricity, August 1993, Maryland, USA, in press, 1993.Google Scholar
14. Ramesh, R., Sands, T., Keramidas, V.G., J. of Electronic Materials, 23, 19(1994); R.Ramesh, J.Lee, T.Sands, V.G.Keramidas and CAuciello, Appl. Phys. Lett., in press.CrossRefGoogle Scholar
15. Ghonge, S., Goo, E., Ramesh, R., Haakenaasen, R. and Fork, D.K., Appl. Phys. Lett., in press.Google Scholar
16. Dimos, D., Warren, W.L., Sinclair, M.B., Tuttle, B.A. and Schwartz, R.W., submitted to J. of Appl. Phys.Google Scholar