Article contents
Interface Velocity Transients During Melting of a-Si/C-Si Thin Films
Published online by Cambridge University Press: 26 February 2011
Abstract
We report transient conductance measurements of liquid/solid interface velocities during pulsed laser melting of amorphous Si (a-Si) films on crystalline Si (c-Si), and a more accurate, systematic procedure for analyzing these measurements than described in previous work [1]. From these analyses are extracted relations between the melting velocities of a-Si and c-Si at a given interface temperature, and between the temperatures during steady-state melting of a-Si and c-Si at a given interface velocity.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1988
References
REFERENCES
- 5
- Cited by