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Interface Synthesis By UHV Deposition/Diffusion Bonding

Published online by Cambridge University Press:  10 February 2011

M. J. Kim ,
M. J. Cox  and
J. Xu
M. J. Kim
Affiliation:
Science and Engineering of Materials and Center for Solid State Science, Arizona State University, Tempe, AZ 85287–1704
M. J. Cox
Affiliation:
Science and Engineering of Materials and Center for Solid State Science, Arizona State University, Tempe, AZ 85287–1704
J. Xu
Affiliation:
Science and Engineering of Materials and Center for Solid State Science, Arizona State University, Tempe, AZ 85287–1704
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Abstract

An ultra high vacuum (UHV) deposition/bonding system has been constructed that can produce planar interfaces from a wide array of materials. The interfaces in this system can be synthesized in-situ by UHV diffusion bonding of two substrates with or without various interfacial layers. Substrate surfaces can be heat treated, sputter cleaned and characterized in-situ prior to deposition and/or bonding. Interfacial layers can be deposited by e-beam evaporation and/or sputter deposition in any layered or alloyed combination. After deposition, the two substrates are bonded in UHV, by the application of heat and pressure.

This synthesis procedure permits systematic variation and control of interface morphology and chemistry. Integrity of the bonded interface as well as the microstructure and chemistry are examined by cross-sectional analytical transmission electron microscopy. In this study, stainless steel and single and polycrystalline alumina were used as substrate materials to produce interfaces with and without Ti and Cu interlayers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 458: Symposium W – Interfacial Engineering for Optimized Properties , 1996 , 327
Copyright
Copyright © Materials Research Society 1997

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References

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