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Interface Structure and Adhesion of Sputtered Ti-Ni Layers on Silicon

Published online by Cambridge University Press:  15 February 2011

Ichiharu Kondo ,
Takao Yoneyama  and
Akira Kinbara
Ichiharu Kondo
Affiliation:
Nippondenso Co. Ltd., Production Eng. R&D #1350, 1-1, Showa-cho, Kariya, Aich, 448, Japan.
Takao Yoneyama
Affiliation:
Nippondenso Co. Ltd., Production Eng. R&D #1350, 1-1, Showa-cho, Kariya, Aich, 448, Japan.
Akira Kinbara
Affiliation:
The University of Tokyo, Department of Applied Physics, Hongo, Tokyo, 113, Japan.
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Abstract

Interface structure and adhesion between a Si substrate after an Ar ion bombardment pretreatment and Ni(100–1500 nm)/Ti(250 nm) double layers prepared in a dc magnetron sputtering apparatus have been investigated.

Two extra layers were generated between the Ti layer and the Si substrate in as-deposited condition. One was an amorphous Si (a-Si) layer(∼ 2 nm) formed on the single crystal Si substrate surface which contains Ar atoms. Another is an amorphous Ti-Si (a-Ti · Si) mixed layer( ∼ 3 nm) on the a-Si layer. A peeling test with an adhesive tape showed that the peeling occurred at the interface between the a-Si and the a-Ti · Si. Ar atoms appeared to be distributed at the interface and the direct contact of the a-Ti · Si layer with the Si substrate seems to be prevented.

After preparing the film and subjecting it to heat treatment at 623 K for 30 min, the adhesion decreased by the accumulation of Ar atoms at the interface. At 723 K for 30 min treatment, however, the adhesion increased probably because of Ar atoms diffusion. It is considered that the Ar atoms incorporated at the interface plays an important role on adhesion of the layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 308: Symposium M1 – Thin Films: Stresses and Mechanical Properties IV , 1993 , 665
Copyright
Copyright © Materials Research Society 1993

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References

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