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Interface Stability of Metal Barrier and low K Dielectrics

Published online by Cambridge University Press:  01 February 2011

Toh-Ming Lu ,
Y. Ou  and
P.-I. Wang
Toh-Ming Lu
Affiliation:
[email protected], Rensselaer Polytechinc Institute, Center for Integrated Electronics, 110, 8th Street, Troy, NY, 12180, United States
Y. Ou
Affiliation:
[email protected], Rensselaer Polytechnic Institute,, Department of Physics, 110, 8th Street, Troy, NY, 12180, United States
P.-I. Wang
Affiliation:
[email protected], Rensselaer Polytechnic Institute, Department of Physics, 110, 8th Street, Troy, NY, 12180, United States
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Abstract

It is known that the interface between a refractory metal barrier and a dielectric material is stable against thermal treatment at a conventional IC interconnect processing temperature. However, the interface may not be stable against thermal and electrical stress called the bias temperature stress (BTS) at moderate conditions of 150 °C and 0.5 MV/cm. Massive refractory metal ions are seen to drift into low K dielectric materials that contain a mixture of organic and inorganic elements. It is argued that the oxidation of the metal at the interface creates unstable metal ions that are ready to drift into the dielectric film under an electric filed during the BTS test. Dielectric or dielectric capping materials that do not contain oxygen can prevent metal oxidation and are desirable to create a stable metal and dielectric interface.

Keywords

barrier layerdielectricfilm
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 990: Symposium B – Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics , 2007 , 0990-B09-05
Copyright
Copyright © Materials Research Society 2007

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References

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