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Interface Reaction Enhanced Epitaxial Growth of Barium Ferrite Magnetic Thin Films

Published online by Cambridge University Press:  15 February 2011

Jinshan Li ,
Robert Sinclair ,
Stephen S. Rosenblum  and
Hidetaka Hayashi
Jinshan Li
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
Robert Sinclair
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
Stephen S. Rosenblum
Affiliation:
Applied Electronics Center, Kobe Steel USA Inc., Palo Alto, CA 94304
Hidetaka Hayashi
Affiliation:
Applied Electronics Center, Kobe Steel USA Inc., Palo Alto, CA 94304
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Abstract

Using facing target sputtering, crystalline magnetoplumbite-type barium ferrite (BaFe12O19 or BaM) thin films have been prepared in-situ at a substrate temperature of 640°C without postdeposition annealing. BaM thin films grow randomly if they are directly deposited onto Si or thermally oxidized Si substrates. However, deposited onto a sputtered ZnO layer (∼230Å) on Si substrates, BaM thin films show excellent c-axis out-of-plane texture with a 0.2° c-axis dispersion angle, as indicated by X-ray diffraction (XRD) study. Cross section transmission electron microscopy (TEM) reveals that the textured films epitaxially grow on a transition layer, which is formed between BaM and ZnO. No direct epitaxial relation between BaM and ZnO was observed. This transition layer is identified by TEM and XRD as ZnFe2O4, which, from a structure point of view, reduces the lattice mismatch between BaM and ZnO, and also enhances the c-axis out-of-plane epitaxial growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 357: Symposium C – Structure and Properties of Interfaces in Ceramics , 1994 , 165
Copyright
Copyright © Materials Research Society 1995

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References

1. Morisako, A., Matsumoto, M. and Naoe, M., IEEE Trans. Magn. vol. 22, 1146 (1986).Google Scholar
2. Speliotis, D. E., IEEE Trans. Magn. vol. 23, 3143, (1987).Google Scholar
3. Hylton, T. L., Parker, M. A., Ullah, M., Coffey, K. R. and Howard, J. K., J. Appl. Phys., vol. 75, 5960 (1994).Google Scholar
4. Rosenblum, S. S., Hayashi, H., Li, J. and Sinclair, R., IEEE Trans. Magn. vol. 30, 4047 (1994).Google Scholar
5. Li, J., Gtir, T., Sinclair, R., Rosenblum, S. S. and Hayashi, H., J. Mater. Res., vol. 9, 1399 (1994).Google Scholar
6. Naoe, M., Hasunuma, S., Hoshi, Y. and Yamanaka, S., IEEE Trans. Magn. vol. 17, 3184 (1981).Google Scholar
7. Yuan, M. S., Glass, H. L. and Adkins, L. R., Appl. Phys. Lett. vol. 53, 341 (1988).Google Scholar
8. Hylton, T. L., Parker, M. A. and Howard, J. K., Appl. Phys. Lett., vol. 61, 867 (1992).Google Scholar
9. Lacroix, E., Gerard, P., Marest, G. and Dupuy, M., J. Appl. Phys. vol. 69, 4770 (1991).Google Scholar
10. Matsuoka, M., Naoe, M. and Hoshi, Y., IEEE Trans. Magn. vol. 21, 1474 (1985).Google Scholar
11. Bravman, J. and Sinclair, R., J. Electron Microscopy Technique, vol. 1, 53 (1984).Google Scholar