Hostname: page-component-745bb68f8f-b6zl4 Total loading time: 0 Render date: 2025-01-12T04:28:09.021Z Has data issue: false hasContentIssue false
  • English
  • Français

Interdiffusion in Semiconductor Quantum Dot Structures

Published online by Cambridge University Press:  11 February 2011

P. Lever ,
L. Fu ,
C. Jagadish ,
M. Gal  and
H.H. Tan
P. Lever
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, AUSTRALIA
L. Fu
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, AUSTRALIA
C. Jagadish
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, AUSTRALIA
M. Gal
Affiliation:
School of Physics, University of New South Wales, Sydney, NSW 2052, AUSTRALIA
H.H. Tan
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, AUSTRALIA
Get access

Abstract

The potential profile of InGaAs quantum dots (QDs) was shown to be easily modified with annealing. We also demonstrate the use of spin-on-glass to create interdiffusion in QDs but the degree of interdiffusion was strongly dependent on the properties of the oxide. By using TiO2 significant suppression of thermal diffusion of the quantum dots could be achieved. On the other hand, very large additional blue shifts (in excess of 120 meV) could be obtained with both H and As implantation. The different nature of defects created by both ions and how they affect the interdiffusion of quantum dots were illustrated. In the dose and annealing temperature range studied, the degree of interdiffusion ultimately depends on the availability of free point defects or point defects liberated from clusters/extended defects to diffuse across the quantum dots.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M6.5
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Grundmann, Bimberg M., Heinrichsdorff, F., Ledentsov, N.N., Ustinov, V.M., Zhukov, A.E., Kovsh, A.R., Maximov, M.V., Shernyakov, Y.M., Volovik, B.V., Tsatsul'nikov, A.F., Kop'ev, P.S., and Alferov, Zh.I., Thin Solid Films 367, 235–249 (2000).Google Scholar
2. Stiff-Roberts, A.D., Krishna, S., Bhattacharya, P., and Kennerly, S., J. Vac. Science Tech. B20, 1185–7 (2002).Google Scholar
3. Grundmann, M., ed., “Nano-Optoelectronics”, Springer-Verlag, Berlin Heidelberg (2002).Google Scholar
4. Leon, R., Kim, Y., Jagadish, C., Gal, M., Zou, J., and Cockayne, D.J.H., Appl. Phys. Lett. 69, 1888 (1996).Google Scholar
5. Xu, S.J., Wang, X.C., Chua, S.J., Wang, C.H., Fang, W.J., Jiang, J., and Xie, X.G., Appl. Phys. Lett. 72, 3335 (1998).Google Scholar
6. Berhane, Y., Manasreh, M.O., Yang, H., and Salamo, G.J., Appl. Phys. Lett. 78, 2196 (2001).Google Scholar
7. Wellmann, P.J., Schoenfeld, W.V., Garcia, J.M., and Petroff, P.M., J. Elec. Matl. 27, 1030 (1998).Google Scholar
8. Leon, R., Swift, G.M., Magness, B., Taylor, W.A., Tang, Y.S., Wang, K.L., Dowd, P., and Zhang, Y.H., Appl. Phys. Lett. 76, 2074 (2000).Google Scholar
9. Bhattacharya, D., Shaer Helmy, A., Bryce, A.C., Avrutin, E.A., and Marsh, J.H., J. Appl. Phys. 88, 4619 (2000).Google Scholar
10. Ziegler, J.F., Biersack, J.P. and Littmark, U., “The Stopping and Range of Ions in Solids”, Vol. 1, Pergamon, New York (1989)Google Scholar
11. Fu, L., Deenapanray, P.N.K., Tan, H.H., Jagadish, C., Dao, L.V. and Gal, M., Appl. Phys. Lett. 76, 837 (2000).Google Scholar
12. Deenapanray, P.N.K., Tan, H.H., Fu, L., Gaff, K. and Jagadish, C., Electrochem. Solid-State Lett. 3, 196 (2000).Google Scholar
13. Herbert Li, E., ed., “Quantum well intermixing by ion implantation and anodic oxidation”, in “Semiconductor Quantum Well Intermixing - Material Properties and Optoelectronic Applications“, Ed. Gordon and Breach, Philadelphia, U.S.A. (1999).Google Scholar
14. Williams, J.S. and Poate, J.M., editors, “Ion implantation and Beam Processing”, Academic Press, Sydney (1984).Google Scholar
15. Sadana, D.K., Nucl. Instrum. Methods B7/8, 375 (1985).Google Scholar
16. Wesch, W., Nucl. Instrum. Methods B6/8, 342 (1992).Google Scholar
17. Fu, L., Tan, H.H., Johnston, M.B., Gal, M. and Jagadish, C., J. Appl. Phys. 85, 6786 (1999).Google Scholar
18. Williams, J.S., Elliman, R.G., Johnson, S.T., Sengupta, D.K. and Zemanski, J.M., Mater. Res. Soc. Symp. Proc. 144, 355 (1989).Google Scholar