Hostname: page-component-745bb68f8f-v2bm5 Total loading time: 0 Render date: 2025-01-27T03:16:47.860Z Has data issue: false hasContentIssue false
  • English
  • Français

Interdiffused Multilayer Processing (IMP) in Alloy Growth

Published online by Cambridge University Press:  25 February 2011

J B Mullin ,
J Giess ,
S J C Irvine ,
J S Gough  and
A Royle
J B Mullin
Affiliation:
RSRE, St Andrews Road, Malvern, Worcs, UK
J Giess
Affiliation:
RSRE, St Andrews Road, Malvern, Worcs, UK
S J C Irvine
Affiliation:
RSRE, St Andrews Road, Malvern, Worcs, UK
J S Gough
Affiliation:
RSRE, St Andrews Road, Malvern, Worcs, UK
A Royle
Affiliation:
RSRE, St Andrews Road, Malvern, Worcs, UK
Get access

Abstract

The Interdiffused Multilayer Processing (IMP) technique has been developed as a way of growing uniform layers of cadmium mercury telluride (CMT). The principle of the technique is discussed in the context of an interdiffusion coefficient so as to assess the potential applicability of the technique to the growth of other II–VI or III–V alloys. The development of IMP for the growth of CMT layers, together with the properties of the layers and their suitability for use in the fabrication of IR detectors, are reviewed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 367
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Irvine, S.J.C., Tunnicliffe, J. and Mullin, J.B., Mat.Lett. 2, 305 (1984)Google Scholar
2. Tunnicliffe, J., Irvine, S.J.C., Dosser, O.D. and Mullin, J.B., J.Cryst.Growth 68, 245 (1984)Google Scholar
3. Irvine, S.J.C. and Mullin, J.B., J.Cryst.Growth, 55, 107 (1981)Google Scholar
4. Mullin, J.B., Irvine, S.J.C. and Royle, A., J.Cryst.Growth 57, 15 (1982)Google Scholar
5. lrvine, S.J.C., Tunnicliffe, J. and Mullin, J.B., 65, 479 (1983)Google Scholar
6. Mullin, J.B. and Hurle, D.T.J., J. Luminescence, 7, 176 (1973)CrossRefGoogle Scholar
7. Ratajczak, E. and Terpilowski, J., Rocziki Chem. 43, 1609 (1969)Google Scholar
8. Kubaschewski, O., Evans, E. Li. and Alcock, C.B., Metallurgical Thermochemistry (Pergamon, Oxford, 1967), p314.Google Scholar
9. Fleming, J.G. and Stevenson, D.A. - in course of publicationGoogle Scholar
10. Zanio, K., J.Vac.Sci.Technol. A4, 2106 (1986)Google Scholar
11. Stevenson, D.A. “Diffusion in the chalcogenides of ZnCd and Pb” in ‘Atomic Diffusion in Semiconductors’ ed. Shaw, D., Plenum Press, London 1973, p431.Google Scholar
12. Casey, H.C. Jr. “Diffusion in the III-V Compound Semiconductors” in ‘Atomic Diffusion in Semiconductors’ ed.Shaw, D., Plenum Press, London 1973, p351.Google Scholar
13. Tischler, M.A. and Bedair, S.M., J.Cryst.Growth, 77, 89 (1986)Google Scholar
14. Brown, M. and Willoughby, A.F.W., J.Cryst.Growth 59, 27 (1982)Google Scholar
15. Wright, P.J., Cockayne, B., Williams, A.J. and Blackmore, G.W., J.Cryst.Growth 79, 357 1986 Google Scholar
16. Bevan, M.J. and Woodhouse, K.T., J.Cryst.Growth 68, 254 (1984)Google Scholar
17. Giess, J., Cough, J.S., irvine, S.J.C., Blackmore, G.W., Mullin, J.B. and Royle, A., J.Cryst.Crowth 72, 120 (1985)Google Scholar
18. Hyliands, M.J., Thompson, J., Vincent, V., Woodhouse, K.T. and Bevan, M.J., J. Vac.Sci.Technol. A4:2217 (1985)Google Scholar
19. Thompson, J., Woodhouse, K.T. and Dineen, C., J.Cryst.Crowth 77, 452 (1986)Google Scholar
20. Irvine, S.J.C., Gless, J., Gough, J.S., Blackmore, G.W., Royle, A., Mullin, J.B., Chew, N.G. and Cullis, A.G., J.Cryst.Growth 77, 437 (1986)Google Scholar
21. Hyliands, M.J., Thompson, J., Bevan, M.J., Woodhouse, K.T. and Vincent, V., J. Vac.Sci.Technol. A4, 2217 (1986)Google Scholar
22. Raccah, P.M., Zhang, Z., Carland, J.W. and Chu, Army H.M., J.Vac.Sci.Technol. A4, 2226 (1986)Google Scholar
23. Hails, J.E., Russell, G.J., Brinkman, A.W. and Woods, J., J.Appl.Phys. 60, 2624(1986)Google Scholar
24. Jenkin, G.T., Thompson, J., Hyliands, M.J., Woodhouse, K.T. and Vincent, V., 2nd. Int.Symp.on Optical and Electro-optical Applied Science and Engineering, SPIE. Cannes, France (1986)Google Scholar
25. Whiffin, P.A.C., Easton, B.C., Capper, P. and Maxey, C.D., J.Cryst.Growth 79, 935 (1986)CrossRefGoogle Scholar
26. Migliorato, P. and White, A.M., Solid State Electronics 26, 65 (1983)Google Scholar
27. Hoke, W.E., This Proceedings p.Google Scholar
28. Basson, J.H. and Booyens, H., Phys.Status Solidi (a) 80, 663 (1983)Google Scholar
29. Booyens, H. and Basson, J.H., Phys.Status Solidi (a) 85, 449 (1984)Google Scholar
30. Matthews, J.W. ‘Coherent interfaces and misfit dislocations’ in “Enitaxial Growth Pt.B” ed. Matthews, J.W., Academic Press, 1975, p560 Google Scholar
31. Cullis, A.G., Chew, N.C., Hutchison, J.L., Irvine, S.J.C. and Ciess, J., Inst. Phys.Conf.Series No.76, Section 1, 29 (1985)Google Scholar
32. Giess, J., Gough, J.S., Irvine, S.J.C., Mullin, J.B. and Blackmore, G.W., this ProceedingsGoogle Scholar
33. Mullin, J.B., Irvine, S.J.C., Giess, J. and Royle, A., J.Cryst.Growth 72, 1 (1985)Google Scholar
34. Mullin, J.B., Royle, A., Giess, J., Gough, J.S. and Irvine, S.J.C., J.Cryst. Growth 77, 460 (1986)Google Scholar
35. Yang, J., Yu, Z. and Tang, D., J.Cryst.Growth 72, 275 (1985)Google Scholar
36. Capper, P., Easton, B.C., Whiffin, P.A.C. and Maxey, C.D., J.Cryst.Growth 79, 508 (1986)Google Scholar
37. Vincent, V., Wilson, C. and Lansdowne, J.M., 3rd Int.Symp. on Optoelectronic Applied Science and Engineering, SPIE, Innsbruck, 1986 Google Scholar
38. Mullin, J.B. and Royle, A., J.Phys.D. 17, L69 (1984)Google Scholar
39. Lou, L.F. and Frye, W.H., J.Appl.Phys. 56, 2253 (1984)Google Scholar
40. Petritz, R.L., Phys.Rev. 110, 1258 (1958)Google Scholar
41. Blackmore, G.W. - unpublished dataGoogle Scholar
42. Specht, L.T., Hoke, W.E., Oguz, S., Lemonias, P.J., Kreismanis, V.G. and Korenstein, R., Appl.Phys.Lett. 48, 417 (1986)Google Scholar
43. Gori, P., Duy, T.N. Cuyen, Thompson, J., Mackett, P. and Jenkins, G. - to be publishedGoogle Scholar