Hostname: page-component-745bb68f8f-g4j75 Total loading time: 0 Render date: 2025-01-27T03:20:22.028Z Has data issue: false hasContentIssue false
  • English
  • Français

Interaction of Reactive Species Obtained by G-D Silane Decomposition with Si(111) and a-Si:H Surfaces

Published online by Cambridge University Press:  26 February 2011

S. A. Cruz  and
V. M. Mendez-Rosales
S. A. Cruz
Affiliation:
Instituto de Investigaciones en Materiales, UNAM, Apdo.Postal 70-360, 04510 Mexico, D.F.
V. M. Mendez-Rosales
Affiliation:
CINVESTAV-IPN, Unidad Mérida, Apdo.Postal 73, Cordemex 97310, Mérida, Yucatán, Mexico.
Get access

Abstract

We calculate the average surface potential barrier for incorporation of H, Si, SiHb (n=1–4) into films of a-Si:H as well as crystalline Si(111) surfaces. In the first case a local amorphous configuration for the surface is employed through a representative cluster(Si29 H1 0 ) forming 5, 6, 7 Si atom rings. For the crystalline surface, several layers of Si atoms are considered. Pairwise superposition of combined Morse and Thomas-Fermi-Moliére interatomic potentials is assumed for the total interaction between the incoming species and the surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 273
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Paul, W., Kinam 4c, 121 (1982).Google Scholar
2 Le Comber, P. G. and Spear, W. E., in Amorphous Semiconductors, edited by Brodsky, M. H. (Springer Verlag Topics in Applied Physics) 36,252 (1979).Google Scholar
3 Spear, W. E. and Le comber, P. G., Solid State Commun. 17, 1193 (1975).Google Scholar
4 Fritzsche, H., Solar Energy Materials 3, 447 (1980).Google Scholar
5 Carlson, D. E., Solar Energy Materials 3, 503 (1980).Google Scholar
6 Schmitt, J. P. M., J. Non-Cryst. Solids 59/60, 187 (1983).Google Scholar
7 Turban, G., Catherine, Y. and Grolleau, B., Plasma Chem. and Plasma Process 2, 61 (1982).Google Scholar
8 Carter, G. and Armour, D. G., Thin Solid Films, 80, 13 (1981).Google Scholar
9 Abril, I., Gras-Marti, A. and Valles-Abarca, J. A., J. Vac. Sci. Technol. A4, 1773 (1986).Google Scholar
10 Cruz, S. A. and Mgndez-Rosales, V. M., Thin Solid Films (in Press)Google Scholar
11 Hermann, K. and Bagus, P. S., Phys. Rev. B2, 1603 (1979).Google Scholar
12 Appelbaum, J., Hamann, D.R. and Tasso, K. H., Phys. Rev. Lett. 39, 1487 (1977)Google Scholar
13 NoorBatcha, I., Raff, L. M. and Thompson, D. L., J. Chem. Phys. 81, 3715 - (1984); 83, 1382 (1985); 85, 3081 (1986).Google Scholar
14 Kleint, Ch., Vacuum 36, 267 (1986).Google Scholar