Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-02T21:24:39.130Z Has data issue: false hasContentIssue false
  • English
  • Français

Interaction of Deuterium with Buried Oxides in Silicon

Published online by Cambridge University Press:  28 February 2011

S. M. Myers
S. M. Myers*
Affiliation:
Sandia National Laboratories, Division 1112, Albuquerque, NM 87185–5800
Get access

Abstract

Silicon with buried oxides formed by ion implantation (SIMOX) or zone-melt recrystallization (ZMR) was exposed to deuterium gas at temperatures from 773 K to 1273 K, and the depth profile of the D was then determined by nuclear-reaction analysis. The D was localized within the buried oxide, with no measurable quantity in the Si phase. Uptake was controlled by permeation through the Si overlayer, and the permeability of D in Si was determined at 873 K. The sample dependence of D uptake indicated substantially fewer defect-trap sites in SIMOX oxide annealed at 1678 K as opposed to 1548 K, with still smaller defect densities in the ZMR oxide. Hydrogen exposure at 1273 K substantially disrupted the SIMOX structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 105
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Hickmott, T. W., J. Appl. Phys. 48, 723 (1977).Google Scholar
2 Griscom, D. L., J. Appl. Phys. 58, 2524 (1985).Google Scholar
3 Mizuno, M., Kubota, M., Nomura, N. and Iwasaki, H., J. Appl. Phys. 62, 2566 (1987).Google Scholar
4 Myers, S. M., J. Appl. Phys. 61, 5428 (1987).Google Scholar
5 Myers, S. M., Caskey, G. R. Jr., Rawl, D. E. Jr. and Sisson, R. D. Jr., Metall. Trans. A 14, 2261 (1983).Google Scholar
6 van Wieringen, A. and Warmoltz, N., Physica 22, 849 (1956).CrossRefGoogle Scholar