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Interaction of Atonic Hydrogen with Ion Bombardment Induced Defects at Si/SiO2 Interfaces

Published online by Cambridge University Press:  22 February 2011

S. Kar  and
S. Ashok
S. Kar
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology, Kanpur-208016, India
S. Ashok
Affiliation:
Center for Electronic Materials & Processing, The Pennsylvania State University, University Park, PA 16802
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Abstract

Electrically active traps were induced in the Si-SiO2 interfacial region by silicon ion bombardment. A Kaufman source was used to introduce 400 eV hydrogen ions into the oxide and the interface. The interaction of the hydrogen species with the traps was monitored by a comprehensive set of electrical measurements of the metal-oxide-silicon [MOS] structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 281
Copyright
Copyright © Materials Research Society 1993

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References

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