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Interaction of Atomic Hydrogen with Chalcogens in Gaas

Published online by Cambridge University Press:  26 February 2011

J. Vetterhöffer  and
J. Weber
J. Vetterhöffer
Affiliation:
Max-Planck-Institut für Festkörperforschung, Postfach 800665, D–70506 Stuttgart, Germany
J. Weber
Affiliation:
Max-Planck-Institut für Festkörperforschung, Postfach 800665, D–70506 Stuttgart, Germany
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Abstract

The passivation by hydrogen of the shallow donors sulfur, selenium, and tellurium in GaAs was studied by infrared absorption spectroscopy (FTIR), capacitance-voltage (CV) depth profiling, and secondary ion mass spectroscopy (SIMS). Local vibrational mode (LVM) frequencies due to hydrogen-donor complexes agree with a microscopic model where the hydrogen atom is bound in the antibonding position to one of the donor’s neighboring gallium atoms. Our results suggest a hydrogen penetration depth much greater than the passivated region, however the infrared active region coincides with the passivated part of the material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 417
Copyright
Copyright © Materials Research Society 1995

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References

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