Interaction Between Dislocations and NiF_e2O₄ Precipitates In A NiO Matrix

Abstract

Three different types of dislocation interactions with NiF_e2O₄ (spinel crystal structure) precipitates in a NiO matrix have been studied. In the first, the movement of dislocations introduced by room temperature deformation is impeded by the spinel precipitates. Glide dislocations in the NiO with ½<011> Burgers vectors and {011} glide planes cannot pass through the spinel precipitates without forming stacking faults because the perfect NiO dislocations are partial dislocations in NiF_e2O₄. Many dislocation loops but no stacking faults were observed in the deformed samples indicating that the gliding dislocations formed the loops when they moved past the precipitates. In the second type of interactions, cusps were formed in the spinel-NiO interface at close to the dislocation loops when the sample was heat treated; the cusps indicate preferential dissolution of the spinel. In the final interaction, the dislocations were shown to act as preferential nucleation sites when spinel was precipitated from the NiO matrix. At slow nucleation rates, NiF_e2O₄ precipitated only on the dislocations; when the nucleation rate was increased, precipitation occurred both on and away from the dislocations. Precipitates which form at a dislocation may contain a stacking fault extending from the partial dislocation to a cusp in the spinel-NiO interface. When this occurred, the stacking faults were observed to be faceted parallel to either {111} or {011} planes.