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Intentional Reconstruction of Silicon Network on the Surface and within Sub-Surface by H and Ar

Published online by Cambridge University Press:  15 February 2011

W. Futako ,
K. Fukutani  and
I. Shimizu
W. Futako
Affiliation:
The Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku. Yokohama, Japan 226
K. Fukutani
Affiliation:
The Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku. Yokohama, Japan 226
I. Shimizu
Affiliation:
The Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku. Yokohama, Japan 226
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Abstract

Silicon thin films were prepared by “Chemical Annealing” where the deposition of thin layer (<3 nm thick) by RF glow discharge of SiH4 and the treatment with hydrogen atoms (H) or triplet state of argon (3Ar) were repeated alternatating. Consequently, wide gap a-Si:H with the gap of 2.1 eV was made by H-treatmentat rather low substrate temperature (Ts<150 °C), while a-Si:H with the gap narrower than 1.6 eV was obtained by the treatment with 3Ar at high Ts (>300 °C), resulting from the release of excessive hydrogen. Both the wider or the narrower gap films exhibited low defect density lower than 1016 cm−3 and obvious improvements in the stability for light soaking.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 495
Copyright
Copyright © Materials Research Society 1997

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References

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