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Intentional Defect Incorporation in Metalorganic Vapor Phase Epitaxy Indium Gallium Arsenide by Oxygen Doping

Published online by Cambridge University Press:  26 February 2011

J. W. Huang  and
T. F. Kuech
J. W. Huang
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706
T. F. Kuech
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706
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Abstract

Intentional defect incorporation in metalorganic vapor phase epitaxy (MOVPE) InxGai-xAs was achieved by controlled oxygen doping using diethylaluminum ethoxide (DEALO). DEALO doping has led to the incorporation of Al and O, and the compensation of shallow Si donors in InxGai-xAs:Si with 0≤x≤ 0.25. DLTS analysis on a series of InxGa1-xAs:Si:O samples with 0≤x≤ 0.18 showed that oxygen incorporation led to a set of deep levels, similar to those found in DEALO doped GaAs. The characteristic deep levels appear to remain at a relatively constant energy with respect to the valence band.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 165
Copyright
Copyright © Materials Research Society 1995

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