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Integration of Yttrium Iron Garnet Films via Reactive RF Sputtering Bethanie

Published online by Cambridge University Press:  10 February 2011

J. H. Stadler  and
Anand Gopinath
J. H. Stadler
Affiliation:
Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55126 ([email protected])
Anand Gopinath
Affiliation:
Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55126 ([email protected])
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Abstract

This work aims to equip integrated optical circuits with important magneto-optical devices, such as isolators, that are currently available only as discrete components. Reactive rf sputtering was used to grow cerium-doped yttrium iron garnet films onto a variety of substrates, including SiO2-buffered Si, fused Si02 and MgO. MgO was used because it has proven to be a good buffer material for semiconducting substrates. Ce-doping was not effective via reactive sputtering due to a scale which formed on the Ce metal that prevented sufficient contact with the rf target. The films were amorphous as deposited. Stoichiometric Y3Fe5O12 films yielded smooth, polycrystalline garnet films upon annealing. A study of the effect of fluctuations in the Y:Fe ratio revealed that oxygen content is important for the prevention of secondary phases. Therefore, a high oxygen content should be used in the sputtering gas and subsequent annealing should be performed in oxygen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 517: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , January 1998 , 481
Copyright
Copyright © Materials Research Society 1998

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References

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