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Integration of Carbon Nanotubes Devices Into Microelectronics

Published online by Cambridge University Press:  15 February 2011

W. Hoenlein ,
F. Kreupl ,
G.S. Duesberg ,
A.P. Graham ,
M. Liebau ,
R. Seidel  and
E. Unger
W. Hoenlein
Affiliation:
Infineon Technologies, Corporate Research, 81739 Munich, Germany
F. Kreupl
Affiliation:
Infineon Technologies, Corporate Research, 81739 Munich, Germany
G.S. Duesberg
Affiliation:
Infineon Technologies, Corporate Research, 81739 Munich, Germany
A.P. Graham
Affiliation:
Infineon Technologies, Corporate Research, 81739 Munich, Germany
M. Liebau
Affiliation:
Infineon Technologies, Corporate Research, 81739 Munich, Germany
R. Seidel
Affiliation:
Infineon Technologies, Corporate Research, 81739 Munich, Germany
E. Unger
Affiliation:
Infineon Technologies, Corporate Research, 81739 Munich, Germany
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Abstract

Carbon Nanotubes (CNTs) offer extraordinary properties for applications in microelectronics. We assess the methods used to grow CNTs for integration into microelectronics, in particular, metallic carbon nanotubes for vias and interconnects as well as semiconducting CNTs for fieldeffect devices are discussed. State-of-the-art CNTFETs are compared to Si-MOSFETs. A vertical CNTFET (VCNTFET) device concept is presented which offers better growth control, adding a new quality to microelectronics and making real 3-dimensional electronics possible.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 772: Symposium M – Nanotube-Based Devices , 2003 , M4.5
Copyright
Copyright © Materials Research Society 2003

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