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Integration of Biaxially Aligned Conducting Oxides with Silicon using Ion-Beam Assisted Deposited MgO Templates

Published online by Cambridge University Press:  21 March 2011

Luke A. Emmert ,
Bae-Ho Park ,
James R. Groves ,
Raymond F. DePaula ,
Q.X. Jia  and
Paul N. Arendt
Luke A. Emmert
Affiliation:
Superconductivity Technology Center, Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87544
Bae-Ho Park
Affiliation:
Superconductivity Technology Center, Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87544
James R. Groves
Affiliation:
Superconductivity Technology Center, Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87544
Raymond F. DePaula
Affiliation:
Superconductivity Technology Center, Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87544
Q.X. Jia
Affiliation:
Superconductivity Technology Center, Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87544
Paul N. Arendt
Affiliation:
Superconductivity Technology Center, Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87544
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Abstract

Two conducting oxides, La0.5Sr0.5CoO3(LSCO) and SrRuO3, were deposited by pulsed laser ablation onto silicon substrates coated with biaxially textured MgO on an amorphous silicon nitride isolation layer. Comparison is made between templates using just 10 nm of ion-beam assisted deposited (IBAD) MgO and substrates with an additional 100 nm of homoepitaxial MgO. Both of these conducting oxide layers exhibited in-plane and out-of-plane texture, on the order of that obtained by the underlying MgO. The SrRuO3 was c-axis oriented on both substrates, but exhibited a slightly sharper out-of- plane texture when the homoepitaxial MgO layer was included. On the other hand, the LSCO showed only (100) orientation when deposited directly on the IBAD-MgO templates, whereas a significant (110) peak was observed for films on the homoepitaxial MgO. A simple calculation of the distribution of grain boundary angles, assuming a normal distribution of grains, is also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 666: Symposium F – Transport and Microstructural Phenomena , 2001 , F7.2
Copyright
Copyright © Materials Research Society 2001

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