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Integrated Amorphous and Polycrystalline Silicon TFTs with a Single Silicon Layer

Published online by Cambridge University Press:  15 February 2011

K. Pangal ,
Y. Chen ,
J.C. Sturm  and
S. Wagner
K. Pangal
Affiliation:
Dept. of Electrical Engineering, Princeton University, Princeton, NJ 08544
Y. Chen
Affiliation:
Dept. of Electrical Engineering, Princeton University, Princeton, NJ 08544
J.C. Sturm
Affiliation:
Dept. of Electrical Engineering, Princeton University, Princeton, NJ 08544
S. Wagner
Affiliation:
Dept. of Electrical Engineering, Princeton University, Princeton, NJ 08544
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Abstract

Selective exposure of an a-Si:H film to a room temperature hydrogen plasma using a patterned SiNx, capping layer and a subsequent anneal at 600°C, resulted in polycrystalline and amorphous silicon regions in a single silicon layer on the same glass substrate. Top-gate non-self-aligned TFTs were fabricated in both the amorphous and polycrystalline regions with all shared processing steps and no laser processing using a re-hydrogenation step. The TFTs had good characteristics, with field-effect mobilities upto 1.2 cm2/Vs and 15 cm2/Vs for the a-Si:H and the poly-Si TFTs, respectively, and ON/OFF ratios >105 in either case.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 629
Copyright
Copyright © Materials Research Society 1999

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References

[1] Mei, P., Boyce, J.B., Fork, D.K., Andersen, G., Ho, J., Lu, J., Hack, M. and Lujan, R., Mat. Res. Soc. Symp. Proc. 507, 3 (1998).Google Scholar
[2] Aoyama, T., Ogawa, K., Mochizuki, Y. and Konishi, N., Appl. Phys. Lett. 66, 3007 (1995).Google Scholar
[3] Theiss, S. D. and Wagner, S., Mat. Res. Soc. Symp. Proc. 424, 65 (1997).Google Scholar
[4] Pangal, K., Sturm, J.C. and Wagner, S., Mat. Res. Soc. Symp. Proc. 508, 577 (1998).Google Scholar
[5] Pangal, K., Sturm, J.C. and Wagner, S., J. Appl. Phys. 85, 1900 (1999).Google Scholar
[6] Pangal, K., Sturm, J.C. and Wagner, S., to be published.Google Scholar
[7] Yin, A. and Fonash, S.J., Mat. Res. Soc. Symp. Proc. 321, 683 (1994).Google Scholar
[8] Yin, A. and Fonash, S.J., US Patent No. US5624873 (1995).Google Scholar
[9] Gleskova, H., Wagner, S. and Suo, Z., Mat. Res. Soc. Symp. Proc. 507, 577 (1998).Google Scholar
[10] Tsai, C.C. and Fritzsche, H., Solar Energy Materials 1 29 (1979).Google Scholar
[11] Pangal, K., Sturm, J.C. and Wagner, S., to be published.Google Scholar