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In-Situ Transmission Electron Microscopy for Analysis of Ion-Beam-Growth Processes

Published online by Cambridge University Press:  21 February 2011

Vladimir V. Pankov ,
Nikolai E. Levchuk  and
Anatoly P. Dostanko
Vladimir V. Pankov
Affiliation:
Belarusian State University of informatics and Radioelectronics, Modern Electronics Technologies Department, Minsk 220027, Belarus
Nikolai E. Levchuk
Affiliation:
Belarusian State University of informatics and Radioelectronics, Modern Electronics Technologies Department, Minsk 220027, Belarus
Anatoly P. Dostanko
Affiliation:
Belarusian State University of informatics and Radioelectronics, Modern Electronics Technologies Department, Minsk 220027, Belarus
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Abstract

Two types of systems for in situ transmission electron microscopy analysis of ion-beam etching, ion-beam sputtering and ion-beam assisted deposition are reported. their design, operational features and some applications are presented. Radiation-stimulated diffusion in Mo-Si heterostructure, early growth of ion-beam sputtered in-Sn, in-Sn-O, ZnS:Mn films and recrystallization of ln-Sn-O films during vacuum post-annealing are studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 405
Copyright
Copyright © Materials Research Society 1995

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