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In-situ surface x-ray scattering study on the buried interfacial layer of Co/Si(111) interface

Published online by Cambridge University Press:  17 March 2011

Tae Soo Kang ,
Jung Ho Je ,
Hyo Jung Kim ,
Do Young Noh ,
Nam Dong Kim  and
Jin Wook Chung
Tae Soo Kang
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Korea
Jung Ho Je
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Korea
Hyo Jung Kim
Affiliation:
Department of Materials Science and Engineering, and Center for Electronic Materials Research, Kwangju Institute of Science and Technology, Kwangju, Korea
Do Young Noh
Affiliation:
Department of Materials Science and Engineering, and Center for Electronic Materials Research, Kwangju Institute of Science and Technology, Kwangju, Korea
Nam Dong Kim
Affiliation:
Department of Physics, Pohang University of Science and Technology, Pohang, Korea
Jin Wook Chung
Affiliation:
Department of Physics, Pohang University of Science and Technology, Pohang, Korea
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Abstract

The highly strained interfacial structure and reaction of Co on Si(111) in the initial growth stage was studied by in-situ surface x-ray scattering. Co was deposited on Si(111) – (7×7) reconstruction by electron beam evaporation in ultra high vacuum. Our study reveals that the interfacial layer, formed by the reaction of Co with Si in the initial growth stage at room temperature, is a silicide layer with stoichiometry of Co2Si. The interfacial silicide layer is a commensurate phase of pseudohexagonal Co2Si, which shows a significant local atomic displacements imposed by Si substrate. The intensity oscillations at the anti-Bragg position with Co coverage show that a layer-by-layer consumption of silicon substrate occurs for the first 15 monolayers (ML) of Co deposited.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 696: Symposium N – Current Issues in Heteroepitaxial Growth--Stress Relaxation and Self Assembly , 2001 , N3.27
Copyright
Copyright © Materials Research Society 2002

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