Hostname: page-component-669899f699-b58lm Total loading time: 0 Render date: 2025-04-29T00:01:18.571Z Has data issue: false hasContentIssue false
  • English
  • Français

In-Situ Studies of Silicon Oxidation

Published online by Cambridge University Press:  21 February 2011

J.M. Gibson  and
M. Y. Lanzerotti
J.M. Gibson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
M. Y. Lanzerotti
Affiliation:
Dunster House, Harvard University, Cambridge, MA 02138
Get access

Abstract

Using a UHV transmission electron microscope we have examined the initial stages of Si oxidation. Using the surface-sensitive forbidden 1/3<422> reflection on Si (111) we have imaged surface steps at various stages of oxidation, including buried Si/SiO2 interface formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 139: Symposium R – High Resolution Microscopy of Materials , 1989 , 67
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Lynch, D., Acta Cryst. A 27, 394 (1971).Google Scholar
[2] Cherns, D., Phil. Mag. 30, 549 (1974).Google Scholar
[3] Goodnick, S. M., Ferry, D. K., Wilmsen, C. W., Liliental, Z., Fathy, D. and Krivanek, O. L., Phys. Rev. B 32, 8171 (1985).Google Scholar
[4] Ohdomari, I., Mihara, T. and Kai, K., J. Appl. Phys. 59, 2798 (1986).Google Scholar
[5] Mott, N. F., Proc. Roy. Soc. A 376, 207, (1981).Google Scholar
[6] Ourmazd, A., Anstis, G. R. and Hirsch, P. B., Phil. Mag. A 48, 139 (1983).Google Scholar
[7] e.g.Levitt, P., PhD, University of Cambridge (1980).Google Scholar
[8] Gibson, J. M., McDonald, M. L., Batstone, J. L. and Phillips, J. M., Ultramicroscopy, 22, 35 (1987).Google Scholar
[9] Shimizu, N., Tanishiro, Y., Kobayashi, K., Takayanagi, K. and Yagi, K., Ultramic. 18, 453 (1985).Google Scholar
[10] Leibsle, F. M., Samsavar, A. and Chiang, T. C., Phys. Rev. B 38, 5780 (1988).Google Scholar
[11] Hahn, P. O. and Henzler, M., J. Vac. Sci. Tech. A 2, 574 (1984).Google Scholar
[12] Gibson, J. M., Lanzerotti, M. Y. and Elser, V., to be published.Google Scholar
[13] Andrews, S. R. and Cowley, R. A., J. Phys. C 18, 6427 (1985).Google Scholar
[14] Carriire, B., Deville, J. P. and Maachi, A. El, Phil. Mag. B 55, 721 (1987).Google Scholar
[15] Takayanagi, K., Tanishiro, Y., Takahashi, M. and Takahashi, S., J. Vac. Sci. Tech. A 3, 1502 (1985).Google Scholar