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In-Situ Studies of Semimagnetic Heterojunction Parameters

Published online by Cambridge University Press:  21 February 2011

Xiaohua Yu ,
N. Troullier ,
A. Raisanen ,
G. Haugstad  and
A. Franciosi
Xiaohua Yu
Affiliation:
Dept. of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
N. Troullier
Affiliation:
Dept. of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
A. Raisanen
Affiliation:
Dept. of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
G. Haugstad
Affiliation:
Dept. of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
A. Franciosi
Affiliation:
Dept. of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
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Abstract

We have conducted a systematic study of Ge-Cd1−xMnxTe heterostructures prepared in situ by deposition of polycrystalline Ge onto atomically clean Cd1−xMnx (110) surfaces. We examined by means of high resolution synchrotron radiation photoemission the valence band offset δEv as a function of the substrate composition x (x=0, 0.35, and 0.60) and bandgap Eg (Eg = 1.47, 1.93, and 2.13 eV). We find δEv=0.84±0.10eV in all cases, and no dependence of δEv on the substrate bandgap within experimental uncertainty. This finding indicates that within the range of validity of the transitivity rule, Cd1−xMnx-Cd1−yMny heterojunctions may actually follow the common anion rule.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 459
Copyright
Copyright © Materials Research Society 1990

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References

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