Hostname: page-component-5f56664f6-spj7j Total loading time: 0 Render date: 2025-05-07T09:36:05.383Z Has data issue: false hasContentIssue false
  • English
  • Français

In-situ emissivity and temperature measurement during rapid thermal processing (RTP)

Published online by Cambridge University Press:  25 February 2011

P. Vandenabeele ,
R. J. Schreutelkamp ,
K. Maex ,
C. Vermeiren  and
W. Coppye
P. Vandenabeele
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
R. J. Schreutelkamp
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
K. Maex
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
C. Vermeiren
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
W. Coppye
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Get access

Abstract

A prototype RTP system has been developed which allows for in-situ emissivity and temperature measurements. The wafer emissivity is measured by using an optical detector at a wavelength of 2.4 μm and by modulation of the lamp power. This method permits accurate temperature determination in the range from 400 to 1200°C, independent of wafer backside roughness, backside layers, and transmit tance. The feasibility of the temperature measurement technique is demonstrated by using wafers with built-in thermocouples and highly As-doped wafers with different backside roughnesses or layers. The emissivity variations during processing can also be used to study thin film reactions in-situ. This is demonstrated for Co silicidation using probing wavelengths varying from 0.6 to 3.2 μm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 653
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

[1] Schreutelkamp, R. J., Vandenabeele, P., Deweerdt, B., Coppye, W., Vermeiren, C., Lauwers, A., and Maex, K., these proceedings.Google Scholar
[2] Sato, T., Jap. J. Appl. Phys. 6, 339 (1967).CrossRefGoogle Scholar
[3] Vandenabeele, P. and Maex, K., SPIE Proc. 1393, 316 (1990).Google Scholar
[4] Van den hove, L., Wolters, R., Maex, K., De Keersmaecker, R., and Declerck, G., J. Vac. Sci. Technol. B 4, 1358 (1986).CrossRefGoogle Scholar