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In-Situ Control of the Direction of Spontaneous Polarization in Ferroelectric thin Films by RF-Magnetron Sputtering

Published online by Cambridge University Press:  10 February 2011

K. Iijima  and
K. Niihara
K. Iijima
Affiliation:
Synergy Ceramics Laboratory, Fine Ceramics Research Association, Nagoya, Aichi 462, Japan, [email protected]
K. Niihara
Affiliation:
Institute of Scientific and Industrial Research, Osaka Univ. Ibaraki, Osaka 567, Japan, [email protected]
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Abstract

La-modified PbTiO3thin films were grown on (100)MgO by rf-magnetron sputtering. Thin films were prepared by “two step method” in which the different Pb/Ti ratios during the growth were used for the first step (0–4nm of thickness) and the subsequent second step (>4nm). The Pb/Ti ratios of the first step were selected from 1.2 to 1.5. The Pb/Ti ratio of the second step, on the other hand, was fixed at 1.4. Strong dependency of the direction of the spontaneous polarization (Ps) to the Pb/Ti ratio of the first step was observed. It is concluded that the direction of the Ps in the films is determined by the atomic species of the first layer of the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 459: Symposium Y – Materials for Smart Systems II , 1996 , 41
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. George, E.P., Takahashi, S., Trolier-McKinstry, S., Uchino, K., Wun-Fogle, M., Materials for Smart Systems. Materials Research Society Symposium Proceedings Vol. 360, 1995.Google Scholar
2. Iijima, K., Tomita, Y., Takayama, R. and Ueda, I., J. Appl. Phys., 60, 361 (1986).Google Scholar
3. Iijima, K., Takayama, R., Tomita, Y., and Ueda, I., J. Appl. Phys., 60, 2914 (1986)Google Scholar
4. Ohnishi, N., Jpn. J. Appl. Phys. 16, 1069 (1977),Google Scholar
Nakamura, K., Ando, H. and Shimizu, H., Appl. Phys. Lett. 50, 1413 (1987)Google Scholar
5. Kamada, T., Takayama, R., Tomozawa, A., Fujii, S., Iijima, K. and Hirao, T., Materials Research Society Symposium Proceedings (in press)Google Scholar