Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-24T14:01:54.842Z Has data issue: false hasContentIssue false

Insertion effect of the 3-nm-thick Co(Pt) layer on AlN preferred orientation and residual stress in the c-axis textured AlN film

Published online by Cambridge University Press:  19 March 2013

Takashi Harumoto
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1-S8-6 O-okayama, Meguro-ku, Tokyo, 152-8552, Japan Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba, 278-8510, Japan
Shinji Muraishi
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1-S8-6 O-okayama, Meguro-ku, Tokyo, 152-8552, Japan
Ji Shi
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1-S8-6 O-okayama, Meguro-ku, Tokyo, 152-8552, Japan
Yoshio Nakamura
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1-S8-6 O-okayama, Meguro-ku, Tokyo, 152-8552, Japan
Takashi Ishiguro
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba, 278-8510, Japan
Get access

Abstract

The effect of the continuously inserted 3-nm-thick Co(Pt) layer on the preferred orientation of AlN film is investigated, and highly c-axis textured AlN film has been obtained. According to high resolution transmission electron microscope observations, the preferred orientation of sputter-deposited AlN film is improved from polycrystalline to (001) texture at the interface between AlN and Co(Pt)(111). The texture of AlN films are also examined using an x-ray diffractometer equipped with a two dimensional positive sensitive detector. The x-ray rocking curve full width at half maximum of 002AlN of (001) textured AlN with the Co(Pt) layer is 2.7°, and the residual stress of such specimen is 1.6 GPa in tensile stress.

Type
Articles
Copyright
Copyright © Materials Research Society 2013

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Loebl, H. P., Metzmacher, C., Milson, R. F., Lok, P., Straten, F. V., and Tuinhout, A., J. Electroceram. 12, 109 (2004).10.1023/B:JECR.0000034005.21609.91CrossRefGoogle Scholar
Kamohara, T., Akiyama, M., Ueno, N., Sakamoto, M., Kano, K., Teshigahara, A., Kawahara, N., and Kuwano, N., Appl. Phys. Lett. 89, 071919 (2006).10.1063/1.2337558CrossRefGoogle Scholar
Hodumi, Y., Shi, J., and Nakamura, Y., Appl. Phys. Lett. 90, 212506 (2007).10.1063/1.2742793CrossRefGoogle Scholar
Yu, Y. X., Hodumi, Y., Shi, J., and Nakamura, Y., Vacuum 84, 158 (2010).10.1016/j.vacuum.2009.04.034CrossRefGoogle Scholar
Harumoto, T., Muraishi, S., Shi, J., and Nakamura, Y., Mater. Technol. 26, 32 (2011).10.1179/175355511X12941605982262CrossRefGoogle Scholar
Harumoto, T., Muraishi, S., Shi, J., and Nakamura, Y., J. Vac. Sci. Technol. A (2012) (submitted).Google Scholar
Kusaka, K., Taniguchi, D., Hanabusa, T., and Tominaga, K., Vacuum 66, 441 (2002).10.1016/S0042-207X(02)00168-9CrossRefGoogle Scholar
Dubois, M. A., and Muralt, P., J. Appl. Phys. 89, 6389 (2001).10.1063/1.1359162CrossRefGoogle Scholar