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Injection Doping of Ultrathin Microcrystalline Silicon films Prepared by CC-CVD

Published online by Cambridge University Press:  15 February 2011

S. Koynov ,
S. Grebner ,
R. Schwarz ,
L. Vassilev ,
I. Sieber ,
M. Schmidt  and
W. Fuhs
S. Koynov
Affiliation:
CL-SENES, Bulgarian Academy of Sciences, BG-1784 Sofia, Bulgaria
S. Grebner
Affiliation:
Technical University of Munich, Physics Department E16, D-85747 Garching, Germany
R. Schwarz
Affiliation:
Instituto Superior Técnico, Physics Department, P-1096 Lisbon, Portugal
L. Vassilev
Affiliation:
Sofia University, Physics Department, BG-1126 Sofia, Bulgaria
I. Sieber
Affiliation:
Hahn-Meitner-Institute, Department of Photovoltaics, D-12489 Berlin, Germany
M. Schmidt
Affiliation:
Hahn-Meitner-Institute, Department of Photovoltaics, D-12489 Berlin, Germany
W. Fuhs
Affiliation:
Hahn-Meitner-Institute, Department of Photovoltaics, D-12489 Berlin, Germany
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Abstract

Recently, we have proposed a cyclic method, referred to as Closed Chamber CVD (CC-CVD), for the preparation of μc-Si films of high crystalline fraction at increased deposition rates. In this work we first report new process conditions of CC-CVD, which result in growth of highly crystalline films with a sharp interface on a foreign substrate. Then these conditions are further used together with a pulsed injection of B2H6 in an appropriate moment of each cycle, so that the disturbance of the crystallization process is prevented. A series of ultrathin μc-Si films, doped by this technique, is characterized by conductivity measurements, SEM, Raman Scattering, optical transmission and UV reflection. A strong reduction of the transient interface layer is achieved and conductivity as high as 2 S/cm <p-type> with an activation energy of 27 meV is reached.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 307
Copyright
Copyright © Materials Research Society 1997

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References

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