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Inhomogeneity in the Network Order of Device Quality a-Si:H

Published online by Cambridge University Press:  01 January 1993

G. Morell ,
R.S. Katiyar ,
S.Z. Weisz ,
M. Gomez  and
I. Balberg
G. Morell
Affiliation:
Physics Department, University of Puerto Rico, Rio Piedras, PR 00931,
R.S. Katiyar
Affiliation:
Physics Department, University of Puerto Rico, Rio Piedras, PR 00931,
S.Z. Weisz
Affiliation:
Physics Department, University of Puerto Rico, Rio Piedras, PR 00931,
M. Gomez
Affiliation:
Physics Department, University of Puerto Rico, Rio Piedras, PR 00931,
I. Balberg
Affiliation:
Racah Institute of Physics, The Hebrew University, Jerusalem 91904, Israel
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Abstract

In this paper we show that the degree of order of the Si network in a-Si:H is increasing with two length scales from the surface into the bulk. The major manifestation of the disorder is the variation in the Si-Si bond-stretching rather than the variation in the width of the dihedral angle distribution. The results are interpreted in terms of the decrease of the hydrogen concentration from the free surface into the bulk.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 321
Copyright
Copyright © Materials Research Society 1993

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References

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