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Inhibited SN Surface Segregation in Epitaxial SNxGE1-x Alloy Films Grown by Pulsed Laser Deposition
Published online by Cambridge University Press: 21 February 2011
Abstract
Epitaxial and compositionally homogeneous SnxGe1-x alloy films have been grown on Si (001) by pulsed laser deposition using elemental Sn and Ge targets. these results demonstrate that pulsed laser deposition can be used to grow alloys by overcoming the strong tendency for Sn surface segregation seen in growth by other methods such as molecular beam epitaxy.
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- Copyright © Materials Research Society 1995
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