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InGaP/GaAs Based Single and Double Heterojunction Bipolar Transistors Grown by MOMBE

Published online by Cambridge University Press:  22 February 2011

F. Ren ,
C. R. Abernathy ,
S. J. Pearton ,
P. W. Wisk  and
R. Esagui
F. Ren
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
C. R. Abernathy
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
P. W. Wisk
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
R. Esagui
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Extract

Carbon-doped base InGaP/GaAs single and double heterojunction bipolar transistors (HBTs) grown by gas-source Metal Organic Molecular Beam Epitaxy (MOMBE) are reported. Large are devices (emitter diameter 70 μm) exhibited gain of 25 for high injection levels at a base doping of 5 × 1019 cm−3. Ideality factors (<1.1)were obtained for both emitter-base and base-collector junctions in both single (SHBT) and double PHBT) heterojunction devices. Vceo's of 12 V and 19 V for SHBTs and DHBTs respectively were measured.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 33
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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