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InGaP Layers Grown on Different GaAs Surfaces for High Efficiency Solar Cells

Published online by Cambridge University Press:  31 January 2011

Oscar Martínez ,
Vanesa Hortelano ,
Vicente Parra ,
Juan Jimenez ,
Tatiana Prutskij  and
Claudio Pelosi
Oscar Martínez
Affiliation:
[email protected], University of Valladolid, Valladolid, Spain
Vanesa Hortelano
Affiliation:
[email protected], University of Valladolid, Valladolid, Spain
Vicente Parra
Affiliation:
[email protected], Grupo Pevafersa, Zamora, Spain
Juan Jimenez
Affiliation:
[email protected], University of Valladolid, Paseo de Belén, 1, Valladolid, 47011, Spain
Tatiana Prutskij
Affiliation:
[email protected], Instituto de Ciencias, BUAP, Puebla, Mexico
Claudio Pelosi
Affiliation:
[email protected], IMEM Institute, Parma, Italy
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Abstract

InGaP layers grown on non-polar and polar GaAs substrate faces are investigated by Raman spectroscopy, microphotoluminescence and cathodoluminescence. The growth on polar faces benefits disorder respect to the layers grown on non polar (001) faces. It is shown that both (111)Ga and (111)As faces result in disordered InGaP layers. However, the layers grown on (111)As faces present inhomogeneous composition. The layers grown on (111)Ga faces present homogeneous composition close to lattice matching and are almost disordered.

Keywords

III-Voptical propertiesmetalorganic deposition
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1167: Symposium O – Compound Semiconductors for Energy Applications and Environmental Sustainability , 2009 , 1167-O03-04
Copyright
Copyright © Materials Research Society 2009

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