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InGaN structure influence on efficiency droop
Published online by Cambridge University Press: 21 March 2014
Abstract
Simulation results of InGaN light-emitting diodes and efficiency droop are presented. A special method for investigating the changes in the semiconductor devices characteristics due to different influencing factors is developed.
The cause of efficiency droop was detected-large difference in carrier lifetimes. The simulation results are used to suggest several techniques for improving LED efficiency up to 10-15 %.
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- Copyright © Materials Research Society 2014
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