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InGaN Layers Grown on Al2O3/ZnO Substrates Prepared by Atomic Layer Deposition

Published online by Cambridge University Press:  01 February 2011

Nola Li ,
Shen-Jie Wang ,
Jeff Nause ,
Adriana Valencia ,
Christopher Summers  and
Ian Ferguson
Nola Li
Affiliation:
[email protected], Georgia Institute of Technology, Electrical and Computer Engineering, 251 Atlantic Dr., D402, Atlanta, GA, 30318, United States
Shen-Jie Wang
Affiliation:
[email protected], Georgia Institute of Technology, Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA, 30332, United States
Jeff Nause
Affiliation:
[email protected], Cermet Inc., Atlanta, GA, 30318, United States
Adriana Valencia
Affiliation:
[email protected], Cermet Inc., Atlanta, GA, 30318, United States
Christopher Summers
Affiliation:
[email protected], Georgia Institute of Technology, Materials Science and Engineering, Atlanta, GA, 30332, United States
Ian Ferguson
Affiliation:
[email protected], Georgia Institute of Technology, Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA, 30332, United States
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Abstract

Atomic layer deposition (ALD) of Al2O3 is used as a passivation layer on ZnO substrates before nitride growth by metalorganic chemical vapor deposition (MOCVD). This layer is being used to prevent Zn diffusion from the substrate, protect the ZnO surface from H2 back etching, and promote high quality nitride growth. ALD-Al2O3 films were grown at 100°C and then annealed in a furnace at various times at 1100°C for crystallization of the passivation layer. XRD results showed both Al2O3 and ZnAl2O4 phases at different intensities for 50 and 20nm ALD-AlM2O3 films. In addition, the InGaN layer has been successfully grown on the passivated ZnO substrate. Findings show that a short annealing time for the ALD-Al2O3 layer will be optimal for InGaN growth.

Keywords

Znatomic layer depositionmetalorganic deposition
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1035: Symposium L – Zinc Oxide and Related Materials–2007 , 2007 , 1035-L11-23
Copyright
Copyright © Materials Research Society 2008

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