Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-30T23:37:48.693Z Has data issue: false hasContentIssue false
  • English
  • Français

InGaN Growth with Indium Content Controlled by GaN Growth Plane

Published online by Cambridge University Press:  01 February 2011

Hisashi Kanie  and
Kenichi Akashi
Hisashi Kanie
Affiliation:
[email protected], Tokyo University of Science, Applied Electronics, Yamazaki 2641, Noda, N/A, Japan, 81-4-7122-9643, 81-4-7122-9195
Kenichi Akashi
Affiliation:
[email protected], Graduate School of Tokyo University of Science, Applied Electronics, Yamazaki 2641, Noda, N/A, Japan
Get access

Abstract

Highly spatially resolved cathodoluminescence (HRCL) imaging and electron backscattering pattern (EBSP) study of InGaN microcrystals were achieved. InGaN grown by the nitridation of a mixture of GaN microcrystals and indium sulfide powders with ammonia at 1000°C had crystal habit with twelve prismatic planes. The prismatic planes were grouped into two groups: the first group is pentagonal shaped planes yielding blue CL (420nm) and rectangular planes without luminescence. EBSP showed that the pentagonal shaped planes are indexed to the {11-20} a-plane and the rectangular plane to the {1-100} m-plane. HRCL imaging showed InGaN accumulated at the V pits on the basal plane. The obevation indicated that the crystal qualty of InGaN and the indium contents incorpated were controlled by the indices of GaN growth planes on which InGaN grew.

Keywords

nitrideluminescencecrystal
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1068: Symposium C – Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates , 2008 , 1068-C08-08
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tsukamoto, N. and Kanie, H. Proc. workshop of SiC and related wide band gap semiconductors, Kyoto, Japan 43 (1996) (in Japanese).Google Scholar
2. Kanie, H. Kawano, T. Sugimoto, K. Kawai, R. Proc. MRS spring meeting, Q5.11 (2000).Google Scholar
3. Chitnis, A. Chen, C. Adivarahan, V. Shatalov, M. Kuokstis, E. Mandavilli, V. Yang, J. and Khan, M. A. APL, 84, 3663 (2004).Google Scholar
4. Sun, Y. J. Brandt, O. Cronenberg, S. Dhar, S. Grahn, H. T. Ploog, K. H. Waltereit, P. and Speck, J. S. Phys. Rev., B 67, 041306 (2003).Google Scholar
5. Kogure, T. J. Cryst. Soc. Jpn., 45, 391–395 (2003) (in Japanese)Google Scholar
6..Elwell, D. Feigelson, R. S. Simkins, M. M. and Tiller, W. A. J. Crystal Growth, 66, 45 (1984).Google Scholar
7. Hiramatsu, H. Kawaguchi, Y. Shimizu, M. Sawaki, N. Zheleva, T. Robert F. Davis Tsuda, H. Taki, W. Kuwano, N. Oki, K. MRS Internet J. Nitride Semicond. Res., 2, 6 (1997).Google Scholar
8. Yoshikawa, A. Che, S.B. Yamaguchi, W. Saito, H. Wang, X.Q. Ishitani, Y. and Hwang, E.S. APL, 90, 073101 (2007).Google Scholar