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Infrared Study of Amorphous Crystalline Phase Transition in an Annealed Amorphous Hydrogenated Silicon Carbon Alloy Film

Published online by Cambridge University Press:  26 February 2011

D. K. Basa  and
F. W. Smith
D. K. Basa
Affiliation:
Dept. of Physics, Utkal University, Bhubaneswar 751004, India.
F. W. Smith
Affiliation:
Dept. of Physics, City College of New York, New York 10031.
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Abstract

An amorphous hydrogenated silicon carbon alloy film (a Si1 x Cx :H with x = 0.29) was prepared by glow discharge decomposition of a silane and ethylene gas mixture. A careful and detailed investigation of the infrared absorption was undertaken in the range 400 to 4000 cm1 for both the as deposited (T =250°C) and annealed (up to 1200°C) film. This study demonstrates clearly that there is a structural change from amorphous to microcrystalline at T =8000C and then to crystalline phase at T a=1200° C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 439
Copyright
Copyright © Materials Research Society 1990

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References

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