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Infrared Photosensitivity Due to the Yb-Induced Defect States in Pb1−xGexTe Alloys

Published online by Cambridge University Press:  10 February 2011

E.P. Skipetrov ,
N.A. Chernova ,
E.A. Zvereva  and
E.I. Slyn'ko
E.P. Skipetrov
Affiliation:
Physics Department, Moscow State University, 119899 Moscow, Russia, [email protected]
N.A. Chernova
Affiliation:
Physics Department, Moscow State University, 119899 Moscow, Russia
E.A. Zvereva
Affiliation:
Physics Department, Moscow State University, 119899 Moscow, Russia
E.I. Slyn'ko
Affiliation:
Institute of Material Science Problems, Chemovtsy Department, 274001 Chernovtsy, Ukraine
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Abstract

Galvanomagnetic properties and photoconductivity kinetics of Pb1−xGexTe(x≤0.04) alloys doped with Yb have been investigated. The alloys exhibit high infrared photosensitivity at temperature under 40 K; at helium temperature, the effect of persistent photoconductivity has been observed. The photoconductivity kinetics after terminating of infrared illumination consists of a fast and a long-term relaxation regions. We explain the observed effects by a capture of electrons into the Yb-induced states, that are subjected to the Jahn-Teller instability. The parameters of the Jahn-Teller states are estimated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 247
Copyright
Copyright © Materials Research Society 2000

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