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Infrared Optical Properties of Ion Implanted and Laser Annealed Silicon

Published online by Cambridge University Press:  15 February 2011

Masanobu Miyao ,
Teruaki Motooka ,
Nobuyoshi Natsuaki  and
Takashi Tokuyama
Masanobu Miyao
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, 185, Japan
Teruaki Motooka
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, 185, Japan
Nobuyoshi Natsuaki
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, 185, Japan
Takashi Tokuyama
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, 185, Japan
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Abstract

Electronic states of extremely heavily doped n-type Si obtained by high dose ion implantation and laser annealing are investigated by measuring the infrared optical properties. Free carrier effective mass (m*) and carrier relaxation time (τ) are obtained as a function of carrier concentration (1019−5×1021 cm−3). Values of m* and τ increase and decrease, respectively, with the increase of carrier concentration. These results are discussed in relation to the occupation of electrons in a new valley of the conduction band.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 163
Copyright
Copyright © Materials Research Society 1981

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References

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