Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-28T09:57:25.222Z Has data issue: false hasContentIssue false
  • English
  • Français

Infrared Emission Properties of Ho Doped KPb2Cl5

Published online by Cambridge University Press:  01 February 2011

Uwe Hömmerich ,
Olusola Oyebola ,
Ei Brown ,
Sudhir B. Trivedi ,
Althea G. Bluiett  and
John M. Zavada
Uwe Hömmerich
Affiliation:
[email protected], Hampton University, Department of Physics, Hampton, Virginia, United States
Olusola Oyebola
Affiliation:
[email protected], Hampton University, Department of Physics, Hampton, Virginia, United States
Ei Brown
Affiliation:
[email protected]@gmail.com, Hampton University, Department of Physics, Hampton, Virginia, United States
Sudhir B. Trivedi
Affiliation:
[email protected], Brimrose Corporation, Baltimore, Maryland, United States
Althea G. Bluiett
Affiliation:
[email protected], Elizabeth City State University, Department of Physics and Chemistry, Elizabeth City, North Carolina, United States
John M. Zavada
Affiliation:
[email protected], North Carolina State University, Department of Electrical and Computer Engineering, Raleigh, North Carolina, United States
Get access

Abstract

We report on the optical properties of Ho doped KPb2Cl5 (Ho: KPC) for potential applications as an infrared (IR) solid-state gain medium. The investigated crystal was synthesized from commercial starting materials of PbCl2, KCl, and HoCl3 followed by several purification steps including directional freezing, zone-refinement, and chlorination. The Ho: KPC crystal was subsequently grown by Bridgman technique. Following optical excitation at 885 nm, several IR emission bands were observed at room-temperature with average wavelengths at 1.07, 1.18, 1.35, 1.65, 2.00, 2.94, and 3.96 μm. The emission at 3.96 μm originated from the 5I5 -> 5I6 transitions of Ho3+ and was further evaluated for possible applications in mid-IR lasers. The decay time of the 5I5 excited state was measured to be 5.0 ms at room-temperature. The long 5I5 lifetime is favorable for laser applications and indicates that non-radiative multi-phonon relaxations are small in Ho: KPC. Based on a Judd-Ofelt analysis, the emission quantum efficiency was determined to be near unity resulting in a peak emission cross-section of 0.62×10-20 cm2 at 3.96 μm. A drawback for laser applications is the long decay time of the lower 5I6 state with a value of 4.8 ms . Since the 3.96 μm transition terminates in the 5I6 level, its long lifetime will lead to population bottlenecking, which limits possible mid-IR lasing to pulsed and quasi-cw operation.

Keywords

laserluminescencecrystal growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1111: Symposium D – Rare-Earth Doping of Advanced Materials for Photonic Applications , 2008 , 1111-D07-05
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kaminski, A. A., Crystalline Lasers: Physical Processes and Operating Schemes (CRC, New York, 1996).Google Scholar
2. Johnson, L.F., Guggenheimer, H. G., Rich, T.C., Ostermayer, F. W., J. Appl. Phys. 43, 1125 (1972).Google Scholar
3. Hart, D. W., Jani, M., Barnes, N. P., Opt. Lett. 21, 728 (1996).Google Scholar
4. Kaminskii, A.A., Fedorov, V. A., Sarkisov, S.E., Bohm, J., Reiche, P., Schultze, D., phys. stat. Solidi (a) 53, K219 (1979).Google Scholar
5. Caird, J. and DeShazer, L. G., IEEE J. Quantum Electron. 11, 97 (1975).Google Scholar
6. Schweitzer, T., Samson, B. N., Hector, J. R., Brocklesby, W. S., Hewak, D. W., Payne, D. N., Infrared Phys. Technol. 40, 59 (1999).Google Scholar
7. Esterowitz, L., Eckhard, R. C., and Allen, R.E., Appl. Phys. Lett. 35, 236 (1979).Google Scholar
8. Tabirian, A. M., Stanley, D. P., Selleck, R.R., Morton, L. H., Guch, S., “High Energy MWIR and New Eyesafe SWIR Lasers”, Proceedings of the 20th Annual Meeting of the IEEE Lasers and Electro-Optics Society LEOS 2007 (October 2007, Orlando).Google Scholar
9. Schneider, J., Carbonnier, C., Unrau, U. B., Appl. Opt. 36, 8595 (1997).Google Scholar
10. Nostrand, M. C., Page, R. H., Payne, S.A., Isaenko, L. I., and Yelisseyev, A. P., J. Opt. Soc. Am. B 18, 264 (2001).Google Scholar
11. Tkachuk, A.M., Ivanova, S. E., Isaenko, L. I., Yelloseyev, A. P., Mironov, D. I., Nostrand, M. C., Page, R., Payne, S., Proc. SPIE 4766, 22 (2002).Google Scholar
12. Jenkins, N.W., Bowman, S.R., O'Connor, S., Searles, S. K., Ganem, J., Opt. Mater. 22, 311 (2003).Google Scholar
13. Amedzake, P., Brown, E., Hommerich, U., Trivedi, S. B., Zavada, J. M., KPC; J. Cryst. Growth 310, 2015 (2008).Google Scholar
14. Sardar, D. K., Chandrasekharan, S. R., Nash, K. L., Gruber, J. B., Burger, A., Roy, U. N., J. Appl. Phys. 103, 093112 (2008).Google Scholar