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Influence Of Ti Related Centers On ZnSe Radiation Spectra

Published online by Cambridge University Press:  10 February 2011

L.I. Bruk
Affiliation:
State University of Moldova, Kishinev, Moldova, MD 2009, [email protected]
V. A. Korotkov
Affiliation:
State University of Moldova, Kishinev, Moldova, MD 2009, [email protected]
P. I. Ketrush
Affiliation:
State University of Moldova, Kishinev, Moldova, MD 2009, [email protected]
A. V. Simashkevich
Affiliation:
State University of Moldova, Kishinev, Moldova, MD 2009, [email protected]
K. D. Sushkevich
Affiliation:
State University of Moldova, Kishinev, Moldova, MD 2009, [email protected]
L. L. Kulyuk
Affiliation:
Institute of Applied Physics of MAS, Kishinev, Moldova, [email protected]
S. M. Popov
Affiliation:
Institute of Applied Physics of MAS, Kishinev, Moldova, [email protected]
L. V. Malikova
Affiliation:
Physics Department and NY State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of CUNY, 2900 Bedford Avenue, Brooklyn, N.Y. 11210, [email protected]
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Abstract

ZnSe annealed in (Zn + 46 wt.% TI) vapors and in Zn melt with 5 wt.% TI addition was investigated. The radiation spectra in the regimes of stationary and pulsed photoluminescence (PL) with the time delaying at 77K were studied. By using coloured cathodoluminescence (CCL) combined with the crystal cleavage image in the secondary electrons reflection the impurities and defects volume distribution was evaluated. It was revealed that at the annealing of ZnSe crystals in TI vapors, the cleavage surface has light blue radiation on the red background with an homogeneous field distribution with the dimensions ˜ 1..10μm. On the edge of the cleavage on the depth of 10μm the region of yellow radiation is observed. At the annealing in the melt the irradiation became blue on a weak red background, the homogeneity enhances. At the room temperature PL spectra correspond with images of cleavage in CCL. In the PL (at 77K) spectra in the exciton region there were observed: bands at 445nm (blue radiation); edge radiation at 460nm, 485nm with the LO phonons replica (blue region) and in the impurity region: bands 500...570nm (yellow-green radiation); 600...700nm and 720...800nm (red radiation). The investigation of PL of the annealed samples surface allowed the suppose, that the bands at 2,76eV (450nm), are stipulated by the free-bound transition on the acceptor center (E + 40meV), including TI.

The comparison of ion and tetrahedronical covalent radiuses of Zn, Se and TI, electronegativity, probability of Zni and Vse. formation at the annealing allowed to suppose that, TI fills Vse. and forms (Zni Tls) and (Vse. Tlse) complexes. The carried out theoretical calculations according to the model of two-atom molecule gives the energy of complexes occurrence (Ev + 0,04) eV and (Ev + 0,8) eV. The first value accordingly is in good agreement with the experimental data.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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