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The Influence of the Void Structure on Deuterium Diffusion in a-Si:H

Published online by Cambridge University Press:  21 February 2011

M. J. Van Den Boogaard ,
S. J. Jones ,
Y. Chen ,
D. L. Williamson ,
R. A. Hakvoort ,
A. Van Veen ,
A. C. Van Der Steege ,
W. M. Arnold Bik ,
W. G. J. H. M. Van Sark  and
W. F. Van Der Weg
M. J. Van Den Boogaard
Affiliation:
Dept. of Physics, Colorado School of Mines, Golden, CO 80401, U.S.A. permanent address: Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80.000, NL-3508 TA Utrecht, the Netherlands
S. J. Jones
Affiliation:
Dept. of Physics, Colorado School of Mines, Golden, CO 80401, U.S.A.
Y. Chen
Affiliation:
Dept. of Physics, Colorado School of Mines, Golden, CO 80401, U.S.A.
D. L. Williamson
Affiliation:
Dept. of Physics, Colorado School of Mines, Golden, CO 80401, U.S.A.
R. A. Hakvoort
Affiliation:
Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, NL-2629 JB Delft, the Netherlands
A. Van Veen
Affiliation:
Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, NL-2629 JB Delft, the Netherlands
A. C. Van Der Steege
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80.000, NL-3508 TA Utrecht, the Netherlands
W. M. Arnold Bik
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80.000, NL-3508 TA Utrecht, the Netherlands
W. G. J. H. M. Van Sark
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80.000, NL-3508 TA Utrecht, the Netherlands
W. F. Van Der Weg
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80.000, NL-3508 TA Utrecht, the Netherlands
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Abstract

We have used small-angle X-ray scattering (SAXS) and Doppler-broadening measurements of positron-annihilation radiation to study changes in the microvoid distribution in PECVD a-Si:H films during annealing. From a comparison of data on deuterium diffusion with information obtained from SAXS we conclude that changes, during annealing, in the dispersive character of deuterium diffusion are likely to be caused by void formation through clustering of smaller structural defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 407
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Schut, H., Ph.D. Thesis, Delft University of Technology, 1990.Google Scholar
2. MacKenzie, I. K., Eady, J. A., and Gingerich, R. R., Phys. Lett. A 33, 279 (1970).Google Scholar
3. Schultz, P. J. and Lynn, K. G., Rev. Mod. Phys. 60, 701 (1988).Google Scholar
4. Hakvoort, R. A., Roorda, S., van Veen, A., van den Boogaard, M. J., Buters, F. J. M., and Schut, H., Mater. Sci. Forum (to be published).Google Scholar
5. Williamson, D. L., Mahan, A. H., Nelson, B. P., and Crandall, R. S., Appl. Phys. Lett. 55, 783 (1989).Google Scholar
6. Mahan, A. H., Chen, Y., Williamson, D. L., and Mooney, G. D., J. Non-Cryst. Solids 137–138, 65 (1991).CrossRefGoogle Scholar
7. Wagner, H. and Beyer, W., Solid State Commun. 48, 585 (1983).CrossRefGoogle Scholar
8. Cardona, M., Phys. Status Solidi B 118, 463 (1983).CrossRefGoogle Scholar
9. Chabal, Y. J., Physica B 170, 447 (1991).Google Scholar
10. Simpson, P. J., Vos, M., Mitchell, I. V., Wu, C., and Schultz, P. J., Phys. Rev. B 44, 12180 (1991).Google Scholar
11. Keinonen, J. et al., Phys. Rev. B 37, 8269 (1988).Google Scholar
12. Mäkinen, J. et al., J. Appl. Phys. 67, 990 (1990).Google Scholar
13. He, Y. J., Hasegawa, M., Lee, R., Berko, S., Adler, D., and Jung, A.-L., Phys. Rev. B 33, 5924 (1986).CrossRefGoogle Scholar
14. Bhide, V. G., Dušane, R. O., Rjarshi, S. V., Shaligram, A. D., and David, S. K., J. Appl. Phys. 62, 108 (1987).Google Scholar
15. Suzuki, R. et al, Jpn. J. Appl. Phys. 30, 2438 (1991).Google Scholar
16. Schaefer, H.-E., Würschum, R., Schwarz, R., Slobodan, D., and Wagner, S., Appl. Phys. A 40, 145 (1986).CrossRefGoogle Scholar
17. Leo, P. H., Moore, K. D., Jones, P. L., and Cocks, F. H., Phys. Status Solidi B 108, K145 (1981).CrossRefGoogle Scholar
18. van den Boogaard, M. J., Bik, W. M. Arnold, Habraken, F. H. P. M., and van der Weg, W. F., J. Non-Cryst. Solids 137–138, 29 (1991).Google Scholar
19. Street, R. A., Tsai, C. C., Kakalios, J., and Jackson, W. B., Philos. Mag. B 56, 305 (1987).CrossRefGoogle Scholar
20. Jackson, W. B., Phys. Rev. B 38, 3595 (1988).Google Scholar
21. Shinar, J., Shinar, R., Mitra, S., and Kim, J.-Y., Phys. Rev. Lett. 62, 2001 (1989).Google Scholar
22. Mitra, S., Shinar, R., and Shinar, J., Phys. Rev. B 42, 6746 (1990).CrossRefGoogle Scholar