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Influence of the Decoration by Dislocations on Grain Boundary Passivation by Hydrogen in Silicon
Published online by Cambridge University Press: 22 February 2011
Abstract
In large grained polycrystalline silicon, the recombination activity of G.B.'s and their passivation by hydrogen is found to be dependent on the decoration by dislocations. Dislocations appear to be preferential paths for in-diffusion, at a depth of a few hundreds of pim's. Similar enhancements of diffusion and passivation exist in grains around dislocations.
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- Copyright © Materials Research Society 1988
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