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The Influence of the Arsine Source on the Purity of InGaAs Grown by Hydride VPE

Published online by Cambridge University Press:  26 February 2011

D. Noel Buckley  and
M. M. Matthiesen
D. Noel Buckley
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
M. M. Matthiesen
Affiliation:
Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139. Work performed while at AT&T Bell Laboratories.
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Abstract

The relatively high background carrier concentration obtained in unintentionally doped epitaxial layers of III-V materials imposes a limitation on applications of the hydride VPE process. It is usually attributed to impurities in the gas sources. Results are presented for InGaAs grown by hydride VPE using a range of growth conditions. Carrier concentrations and growth rates for the various samples were determined using, respectively, Polaron electrochemical profiler measurements and scanning electron microscopy. It is shown that the observed background carrier concentration increased with increasing input mole fraction of arsine under conditions of constant growth rate. This strongly implicates the arsine feed gas as a predominant source of impurity. Attempts to purify the arsine feed gas using sodium alumina-silicate molecular sieves are described. Polaron electrochemical profiler measurements and Hall effect measurements on samples grown both with and without molecular sieves in the arsine feed line are presented. From a comparison of the corresponding values of carrier concentration and mobility it is shown that Type 4A molecular sieves were not effective in removing dopant impurities from the 4% arsine-hydrogen mixture used.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 335
Copyright
Copyright © Materials Research Society 1989

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References

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