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Influence of stress on structural and dielectric anomaly of Bi2(Zn1/3Ta2/3)207 thin films

Published online by Cambridge University Press:  01 February 2011

Jun Hong Noh ,
Hee Bum Hong  and
Kug Sun Hong
Jun Hong Noh
Affiliation:
School of Materials Science & Engineering, College of Engineering, Seoul National University, Seoul, Korea 1Corresponding author, E-mail address: [email protected]
Hee Bum Hong
Affiliation:
School of Materials Science & Engineering, College of Engineering, Seoul National University, Seoul, Korea 1Corresponding author, E-mail address: [email protected]
Kug Sun Hong*
Affiliation:
School of Materials Science & Engineering, College of Engineering, Seoul National University, Seoul, Korea 1Corresponding author, E-mail address: [email protected]
*
1Corresponding author: E-mail address:[email protected]
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Abstract

Bi2(Zn1/3Ta2/3)2O7 (BZT) thin films were grown on the (111) oriented Pt/TiOx/SiO2/Si substrates using a pulsed laser deposition (PLD) technique. BZT thin films deposited at an oxygen partial pressure of 400 mTorr have the non-stoichiometric anomalous cubic phase despite the BZT target was the monoclinic phase. Compositions, the lattice mismatch, the interfacial layer and the residual stress in the film were investigated as the factors which may affect the formation of the anomalous cubic phase. Among them, the coherent interfacial layer which formed at high oxygen pressures resulted in the formation of the cubic phase by reducing the internal stress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 875: Symposium O – Thin Films - Stresses and Mechanical Properties XI , 2005 , O12.15
Copyright
Copyright © Materials Research Society 2005

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