Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-02T23:14:37.845Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of Solute Additions on Electromigration in Aluminum

Published online by Cambridge University Press:  15 February 2011

Choong-Un Kim ,
J. W. Morris Jr. ,
F. Y. Génin  and
M. J. Fluss
Choong-Un Kim
Affiliation:
Center for Advanced Materials, Lawrence Berkeley National Laboratory and Department of Materials Science, University of California, Berkeley
J. W. Morris Jr.
Affiliation:
Center for Advanced Materials, Lawrence Berkeley National Laboratory and Department of Materials Science, University of California, Berkeley
F. Y. Génin
Affiliation:
Chemistry and Materials Science, Lawrence Livermore National Laboratory Livermore, CA.
M. J. Fluss
Affiliation:
Chemistry and Materials Science, Lawrence Livermore National Laboratory Livermore, CA.
Get access

Abstract

This study investigates the effect of solute additions on electromigration in Al-based thin film binary alloys. The “cross-strip” technique was used to observe solute electromigration and its influence on Al electromigration. The results of electromigration tests on five alloy additions, Ag, Au, Cu, Pd and Ni, are presented. It is concluded that beneficial solutes have two characteristics. First, they have a large, negative effective valence (Z**). Second, they have sufficient solubility in Al at test temperature to provide a reservoir of mobile atoms. Ag and Au are relatively ineffective because of their low effective valence. Pd and Ni appears to be relatively ineffective because of their low solubility at test temperature. Only Cu satisfies both criteria.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 213
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. d'Heurle, F.M. and Rosenberg, R., Physics of Thin films, Academic Press, New York, 1973, p.257.Google Scholar
2. Kwok, T. and Ho, P.S., Diffusion in Thin films and Microelectronic Materials, Noyes Publication, Park Ridge, 1988, p.369.Google Scholar
3. van Ek, J and Lodder, A., J. Phys.: Condens. Matter 3, p. 7307 (1991).Google Scholar
4. Ames, I., d'Heurle, F.M., and Horstmann, R.E., IBM J. Res. Develop. 14, p. 461 (1970).Google Scholar
5. d'Heurle, F.M., Metall. Trans. 2, p.683 (1971).Google Scholar
6. Gangulee, A. and d'Heurle, F.M., Aliotta, C.F., and Ranieri, V.A., J. Appl. Phys. 46, p.4845 (1975).Google Scholar
7. Rosenberg, R., Mayadas, A.F. and Gupta, D., Surface Sci. 31, p.566 (1972).Google Scholar
8. Gangulee, A. and D'Heurle, F.M., Thin Solid Films 25, p.317 (1975).Google Scholar
9. Rodbell, K.P., Knorr, D.B., and Mis, J.D., J. Electron. Materials 22, p.597 (1993)Google Scholar
10. Rodbell, K.P., Microelectronic and Reliability 32, p. 1521 (1992).Google Scholar
11. Elliott, L.J., Paine, D.C., and Rose, J.H., Materials Reliability in Microelectronics IV, Mat. Res. Soc. Proc., Pittsburgh, 1994, pp.325–331.Google Scholar
12. Howard, J.K. and Ross, R.F., Appl. Phys. Letters 18, p.344 (1971).Google Scholar
13. Ho, P.S. and Howard, J.K, J. Appl. Phys. 45, p. 3229 (1974).Google Scholar
14. Ho, P.S., Lewis, J.E., and Howard, J.K., Thin Solid Films 25, p. 301 (1975).Google Scholar
15. Kim, C., and Morris, J.W., Jr., J. Appl. Phys. 73, 4885 (1993).Google Scholar
16. Rajagopalan, G., Dryer, M.L., Theodore, N.D., and Cale, T.S., Thin Solid Films 270, p. 439 (1995).Google Scholar
17. Kang, S.H., Kim, C., Morris, J.W. Jr., and Genin, F., J. Appl. Phys. 79, p.8330 (1996).Google Scholar
18. Smith, D.A., Small, M.B., and Garratt-Reed, A.J., Materials Reliability in Microelectronics IV, Mat. Res. Soc. Proc., Pittsburgh, 1994, pp.313–318.Google Scholar
19. Nomoto, T. and Nogami, T., proceedings of 32nd International Reliability Physics Symposium, IEEE, 1994, p. 207.Google Scholar
20. Mondolfo, L.F., Aluminum Alloys: Structure and Properties, Butterworth, London, 1976, pp. 253–355.Google Scholar