Hostname: page-component-745bb68f8f-g4j75 Total loading time: 0 Render date: 2025-01-27T02:25:52.717Z Has data issue: false hasContentIssue false
  • English
  • Français

The Influence of RTA Heating Rate on the TiSi2 and Si - TiSi2 Interface Roughness

Published online by Cambridge University Press:  22 February 2011

A. A. M. Lagana ,
M. C. Valente ,
A. G. Pedrine ,
J. C. de Souza Filho ,
J. W. Stuart  and
J. J. Santiago-Avilés
A. A. M. Lagana
Affiliation:
Laboratorio de Sistemas Integraveis, Ecola Politecnica, Universidade de Sao Paulo, S.P., Brazil
M. C. Valente
Affiliation:
Laboratorio de Sistemas Integraveis, Ecola Politecnica, Universidade de Sao Paulo, S.P., Brazil
A. G. Pedrine
Affiliation:
Laboratorio de Sistemas Integraveis, Ecola Politecnica, Universidade de Sao Paulo, S.P., Brazil
J. C. de Souza Filho
Affiliation:
Laboratorio de Sistemas Integraveis, Ecola Politecnica, Universidade de Sao Paulo, S.P., Brazil
J. W. Stuart
Affiliation:
Facultade de Engenharia Electrica da UNICAMP, Campinas, S.P., Brazil
J. J. Santiago-Avilés
Affiliation:
University of Pennsylvania, Dept. of Electrical Engineering, Philadelphia, PA 19104
Get access

Abstract

In TiSi2 metallized devices, the second distribution of leakage current (I>lμA) is caused by the Si/TiSi2 interface roughness. In this work, 40gm thick Ti films are sputtered onto Si waters. RTA was done in N2 atmosphere. Heating rates of 0, 0.5, 1, 5, and 100°C S−-1 are examined. Samples are characterized by AFM, RBS, XRD and laser light scattering methods. The parameters related to roughness are heating rate sensitivity and oxygen contamination which decreases the roughness on the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 129
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Levy, D., Delpech, P., Paoli, M., Masurel, C., Vernet, M., Nrum, N., Conchord, J.P., Hanifi, M.A., Haond, M., D'ouville, T.T., and Mongan, N.P., “Optimization of a Self-Aligned Titanium Silicide Process for Sub-Micron Technology,” IEEE Trans. on Semiconductor Manufacturing, 3(4), 168 (1990).Google Scholar
2. Ivo, J., Raaijmakers, M.M., and Kim, K-B., “A Comparison of the Reaction of Titaniium with Amorphous and Policrystalline Silicon,” J. Appl. Phys 67(10), 6255 (1990).Google Scholar
3. Ivo, J., Raaijmakers, M.M., Reader, A.H. and Houton, H.J.W. Van, “Nucleation and Growth of Titanium Silicide Studied by In-Situ Annealing in a TEM,” J. Appl. Phys 61(7), 2527 (1987).Google Scholar