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Influence of Preparation Conditions on Charge Carrier Dynamics In a-Si:H Determined By An In-Siju Technique

Published online by Cambridge University Press:  28 February 2011

A. Werner  and
M. Kunst
A. Werner
Affiliation:
Hahn-Meitner-institut für Kernforschung Berlin, Bereich Strahlenchemie, Glienicker Str. 100, D-1000 Berlin 39, Federal Reoublic of Germany
M. Kunst
Affiliation:
Hahn-Meitner-institut für Kernforschung Berlin, Bereich Strahlenchemie, Glienicker Str. 100, D-1000 Berlin 39, Federal Reoublic of Germany
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Abstract

Contactless photoconductivity measurements with the time-resolved microwave conductivity technique have been performed during the growth of hydrogenated amorphous silicon films. it has been shown that low substrate temperature and thin films lead to a larger electron decay rate and to an increased infrared absorption compared with high quality films. Addition of H2S to SiH4 during the glow discharge process leads to a worse fi1m quality which can be detected in-situ.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 137
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

[1] Street, R.A., Knights, J.C., Biegelsen, D.K., Phys. Rev. B 18, 1880 (1978)CrossRefGoogle Scholar
[2] Cody, G.D., Abeles, B., Brooks, B., Persans, P., Roxlo, L., Ruppert, A., Wronski, C., J. Non-Cryst. Solids 59, 60, 325 (1983)Google Scholar
[3] Pries, W., McLoed, R.D., Card, H.C., Kao, K.C., Appl. Phys. Lett. 45, 734 (1984)CrossRefGoogle Scholar
[4] Tauc, J., Semiconductors and Semimetals vol.21 B, Academic Press London, ed. by Pankove, J.I., p. 299 (1984)Google Scholar
[5] Kunst, M., Werner, A., J. Appl. Phys. 58, 2236 (1985)CrossRefGoogle Scholar
[6] Tiedje, T., Cebulka, J.M., mosel, D.L., Abeles, B., Phys. Rev. Lett. 46, 1425 (1981)CrossRefGoogle Scholar
[7] Werner, A., Kunst, M., Appl. Phys. Lett. 46, 69 (1985)CrossRefGoogle Scholar
[8] Cody, G.D., ref. 4, p. 11Google Scholar