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Influence of Oxygen and Boron on Defect Production in Irradiated Silicon

Published online by Cambridge University Press:  26 February 2011

P. J. Drevinsky ,
C. E. Caefer ,
S. P. Tobin ,
J. C. Mikkelsen Jr  and
L. C. Kimerling
P. J. Drevinsky
Affiliation:
Rome Air Development Center, Solid State Sciences Directorate, Hanscom AFB, MA 01731
C. E. Caefer
Affiliation:
Rome Air Development Center, Solid State Sciences Directorate, Hanscom AFB, MA 01731
S. P. Tobin
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
J. C. Mikkelsen Jr
Affiliation:
Xerox PARC, 3333 Coyote Hill Rd., Palo Alto, CA 94304
L. C. Kimerling
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Introduction rates of dominant defects have been determined for electron-irradiated, p-type silicon as a function of oxygen and boron concentration. Samples included those with oxygen content ranging from 8 × 1015 to 7 × 1017 cm−3. Initial results are described for samples with measured carbon content varying from 2 × 1015 to 6 × 1016 cm−3. Competing defect reactions involving the interstitial defects, Bi and Ci, and oxygen, boron, and carbon are observed. The identities of an electron trap (Bi-Oi) and a hole trap (Bi-Bs) have been clarified.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 167
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

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