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Influence of Off-Oriented Substrates on Heteroepitaxial Growth of (Ca, Sr)F2 Layers on Si (100)

Published online by Cambridge University Press:  28 February 2011

Tetsuroh Minemura ,
Junko Asano ,
Kazuo Tsutsui  and
Seijiro Furukawa
Tetsuroh Minemura
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd., 4026 Kuji-cho, Hitachi 319-12, Japan
Junko Asano
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd., 4026 Kuji-cho, Hitachi 319-12, Japan
Kazuo Tsutsui
Affiliation:
Dpt. of Applied Electronics, Tokyo Institute of Technology, 4259 Nagatsuda, Midori - ku, Yokohama 227. Japan
Seijiro Furukawa
Affiliation:
Dpt. of Applied Electronics, Tokyo Institute of Technology, 4259 Nagatsuda, Midori - ku, Yokohama 227. Japan
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Abstract

Heteroepitaxial growth of CaxSr1-xF2 layers on Si (100) substrates by molecular beam epitaxy has been investigated for GaAs / fluoride / Si structures. The Si (100) substrates off-oriented toward [011] show no considerable influence on crystallinity of CaF2 and SrF2 epitaxial layers. The off - oriented substrates, however, influence a remarkable effect on CaxSr1-xF2 layers, resulting in poor crystallinity rather than good one. This influence of off-oriented Si (100) substrates on the heteroepitaxy of CaxSr1-xF2 layers was the opposite of that found in GaAs/Si (100) structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 521
Copyright
Copyright © Materials Research Society 1990

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References

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